Developments of two 4 × 10 Gb/s VCSEL array drivers in 65 nm CMOS for HEP experiments

This paper presents the designs and test results of two radiation tolerant 4 × 10 Gb/s vertical cavity surface emitting laser (VCSEL) array drivers VLAD and lpVLAD, both fabricated in a 1.2 V 65 nm CMOS technology. VLAD adopts a power efficient bandwidth-boost technology, and lpVLAD employs a novel...

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Detalles Bibliográficos
Autores principales: Guo, D, Gong, D, Xiang, A C, Moreira, P, Kulis, S, Chen, J, Hou, S, Liu, C, Liu, T, Prosser, A, He, H, Sun, Q, Wang, J, Yang, D, Ye, J, Zhou, W
Lenguaje:eng
Publicado: 2017
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/12/02/C02065
http://cds.cern.ch/record/2275302

Internet

https://dx.doi.org/10.1088/1748-0221/12/02/C02065
http://cds.cern.ch/record/2275302

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