A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors

In the framework of the CERN-RD50 collaboration, the adoption of p-type substrates has been proposed as a suitable mean to improve the radiation hardness of silicon detectors up to fluences of $10^{16} \rm{n}/\rm{cm}^2$. In this work the simulated electrical characteristics of irradiated p-type and n-type detectors are reported, for comparison with experimental measurements collected from the literature. The behaviour of the silicon devices at a fluence of $10^{16} \rm{n}/\rm{cm}^2$ shows better results in terms of charge collection efficiency using a p-type silicon detector.