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A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors
In the framework of the CERN-RD50 collaboration, the adoption of p-type substrates has been proposed as a suitable mean to improve the radiation hardness of silicon detectors up to fluences of $10^{16} \rm{n}/\rm{cm}^2$. In this work the simulated electrical characteristics of irradiated p-type and...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2005
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/NSSMIC.2005.1596601 http://cds.cern.ch/record/2634248 |
| _version_ | 1780959724287557632 |
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| author | Petasecca, Marco Moscatelli, Francesco Passeri, Daniele Pignatel, Giorgio Umberto Scarpello, Carlo Caprai, Giovanni |
| author_facet | Petasecca, Marco Moscatelli, Francesco Passeri, Daniele Pignatel, Giorgio Umberto Scarpello, Carlo Caprai, Giovanni |
| author_sort | Petasecca, Marco |
| collection | CERN |
| description | In the framework of the CERN-RD50 collaboration, the adoption of p-type substrates has been proposed as a suitable mean to improve the radiation hardness of silicon detectors up to fluences of $10^{16} \rm{n}/\rm{cm}^2$. In this work the simulated electrical characteristics of irradiated p-type and n-type detectors are reported, for comparison with experimental measurements collected from the literature. The behaviour of the silicon devices at a fluence of $10^{16} \rm{n}/\rm{cm}^2$ shows better results in terms of charge collection efficiency using a p-type silicon detector. |
| id | oai-inspirehep.net-1602557 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2005 |
| record_format | invenio |
| spelling | oai-inspirehep.net-16025572019-09-30T06:29:59Zdoi:10.1109/NSSMIC.2005.1596601http://cds.cern.ch/record/2634248engPetasecca, MarcoMoscatelli, FrancescoPasseri, DanielePignatel, Giorgio UmbertoScarpello, CarloCaprai, GiovanniA comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectorsDetectors and Experimental TechniquesIn the framework of the CERN-RD50 collaboration, the adoption of p-type substrates has been proposed as a suitable mean to improve the radiation hardness of silicon detectors up to fluences of $10^{16} \rm{n}/\rm{cm}^2$. In this work the simulated electrical characteristics of irradiated p-type and n-type detectors are reported, for comparison with experimental measurements collected from the literature. The behaviour of the silicon devices at a fluence of $10^{16} \rm{n}/\rm{cm}^2$ shows better results in terms of charge collection efficiency using a p-type silicon detector.oai:inspirehep.net:16025572005 |
| spellingShingle | Detectors and Experimental Techniques Petasecca, Marco Moscatelli, Francesco Passeri, Daniele Pignatel, Giorgio Umberto Scarpello, Carlo Caprai, Giovanni A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors |
| title | A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors |
| title_full | A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors |
| title_fullStr | A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors |
| title_full_unstemmed | A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors |
| title_short | A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors |
| title_sort | comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors |
| topic | Detectors and Experimental Techniques |
| url | https://dx.doi.org/10.1109/NSSMIC.2005.1596601 http://cds.cern.ch/record/2634248 |
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