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A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors
In the framework of the CERN-RD50 collaboration, the adoption of p-type substrates has been proposed as a suitable mean to improve the radiation hardness of silicon detectors up to fluences of $10^{16} \rm{n}/\rm{cm}^2$. In this work the simulated electrical characteristics of irradiated p-type and...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2005
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/NSSMIC.2005.1596601 http://cds.cern.ch/record/2634248 |