Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions

The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the perip...

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Detalles Bibliográficos
Autores principales: Gupta, Viyas, Bosser, Alexandre, Tsiligiannis, Georgios, Zadeh, Ali, Javanainen, Arto, Virtanen, Ari, Puchner, Helmut, Saigne, Frederic, Wrobel, Frederic, Dilillo, Luigi
Lenguaje:eng
Publicado: 2016
Materias:
Other
Acceso en línea:https://dx.doi.org/10.1109/TNS.2016.2559943
http://cds.cern.ch/record/2268228
Descripción
Sumario:The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry, with a possible effect due to fluence. Dynamic tests results show a high sensitivity of this memory to switching activity of this peripheral circuitry

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