Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions

The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the perip...

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Detalles Bibliográficos
Autores principales: Gupta, Viyas, Bosser, Alexandre, Tsiligiannis, Georgios, Zadeh, Ali, Javanainen, Arto, Virtanen, Ari, Puchner, Helmut, Saigne, Frederic, Wrobel, Frederic, Dilillo, Luigi
Lenguaje:eng
Publicado: 2016
Materias:
Other
Acceso en línea:https://dx.doi.org/10.1109/TNS.2016.2559943
http://cds.cern.ch/record/2268228
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author Gupta, Viyas
Bosser, Alexandre
Tsiligiannis, Georgios
Zadeh, Ali
Javanainen, Arto
Virtanen, Ari
Puchner, Helmut
Saigne, Frederic
Wrobel, Frederic
Dilillo, Luigi
author_facet Gupta, Viyas
Bosser, Alexandre
Tsiligiannis, Georgios
Zadeh, Ali
Javanainen, Arto
Virtanen, Ari
Puchner, Helmut
Saigne, Frederic
Wrobel, Frederic
Dilillo, Luigi
author_sort Gupta, Viyas
collection CERN
description The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry, with a possible effect due to fluence. Dynamic tests results show a high sensitivity of this memory to switching activity of this peripheral circuitry
id oai-inspirehep.net-1603045
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2016
record_format invenio
spelling oai-inspirehep.net-16030452019-09-30T06:29:59Zdoi:10.1109/TNS.2016.2559943http://cds.cern.ch/record/2268228engGupta, ViyasBosser, AlexandreTsiligiannis, GeorgiosZadeh, AliJavanainen, ArtoVirtanen, AriPuchner, HelmutSaigne, FredericWrobel, FredericDilillo, LuigiHeavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and ConditionsOtherThe impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry, with a possible effect due to fluence. Dynamic tests results show a high sensitivity of this memory to switching activity of this peripheral circuitryoai:inspirehep.net:16030452016
spellingShingle Other
Gupta, Viyas
Bosser, Alexandre
Tsiligiannis, Georgios
Zadeh, Ali
Javanainen, Arto
Virtanen, Ari
Puchner, Helmut
Saigne, Frederic
Wrobel, Frederic
Dilillo, Luigi
Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions
title Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions
title_full Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions
title_fullStr Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions
title_full_unstemmed Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions
title_short Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions
title_sort heavy-ion radiation impact on a 4 mb fram under different test modes and conditions
topic Other
url https://dx.doi.org/10.1109/TNS.2016.2559943
http://cds.cern.ch/record/2268228
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