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Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions
The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the perip...
| Autores principales: | , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2016
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2016.2559943 http://cds.cern.ch/record/2268228 |