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Measurements of multiple scattering of high energy protons in bent silicon crystals

The ordered positions of atoms in crystals give a reason to study multiple Coulomb scattering of high energy charged particles within them. In addition, the accurate representation of multiple scattering of high energy protons in a bent crystal is important for studies of crystal assisted collimatio...

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Detalles Bibliográficos
Autores principales: Scandale, W, Arduini, G, Butcher, M, Cerutti, F, Garattini, M, Gilardoni, S, Lechner, A, Losito, R, Masi, A, Mirarchi, D, Montesano, S, Redaelli, S, Rossi, R, Schoofs, P, Smirnov, G, Valentino, G, Breton, D, Burmistrov, L, Chaumat, V, Dubos, S, Maalmi, J, Puill, V, Stocchi, A, Bagli, E, Bandiera, L, Germogli, G, Guidi, V, Mazzolari, A, Dabagov, S, Murtas, F, Addesa, F, Cavoto, G, Iacoangeli, F, Galluccio, F, Afonin, A G, Chesnokov, Yu A, Durum, A A, Maisheev, V A, Sandomirskiy, Yu E, Yanovich, A A, Kovalenko, A D, Taratin, A M, Denisov, A S, Gavrikov, Yu A, Ivanov, Yu M, Lapina, L P, Malyarenko, L G, Skorobogatov, V V, James, T, Hall, G, Pesaresi, M, Raymond, M
Lenguaje:eng
Publicado: 2017
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.nimb.2017.02.060
http://cds.cern.ch/record/2275923
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author Scandale, W
Arduini, G
Butcher, M
Cerutti, F
Garattini, M
Gilardoni, S
Lechner, A
Losito, R
Masi, A
Mirarchi, D
Montesano, S
Redaelli, S
Rossi, R
Schoofs, P
Smirnov, G
Valentino, G
Breton, D
Burmistrov, L
Chaumat, V
Dubos, S
Maalmi, J
Puill, V
Stocchi, A
Bagli, E
Bandiera, L
Germogli, G
Guidi, V
Mazzolari, A
Dabagov, S
Murtas, F
Addesa, F
Cavoto, G
Iacoangeli, F
Galluccio, F
Afonin, A G
Chesnokov, Yu A
Durum, A A
Maisheev, V A
Sandomirskiy, Yu E
Yanovich, A A
Kovalenko, A D
Taratin, A M
Denisov, A S
Gavrikov, Yu A
Ivanov, Yu M
Lapina, L P
Malyarenko, L G
Skorobogatov, V V
James, T
Hall, G
Pesaresi, M
Raymond, M
author_facet Scandale, W
Arduini, G
Butcher, M
Cerutti, F
Garattini, M
Gilardoni, S
Lechner, A
Losito, R
Masi, A
Mirarchi, D
Montesano, S
Redaelli, S
Rossi, R
Schoofs, P
Smirnov, G
Valentino, G
Breton, D
Burmistrov, L
Chaumat, V
Dubos, S
Maalmi, J
Puill, V
Stocchi, A
Bagli, E
Bandiera, L
Germogli, G
Guidi, V
Mazzolari, A
Dabagov, S
Murtas, F
Addesa, F
Cavoto, G
Iacoangeli, F
Galluccio, F
Afonin, A G
Chesnokov, Yu A
Durum, A A
Maisheev, V A
Sandomirskiy, Yu E
Yanovich, A A
Kovalenko, A D
Taratin, A M
Denisov, A S
Gavrikov, Yu A
Ivanov, Yu M
Lapina, L P
Malyarenko, L G
Skorobogatov, V V
James, T
Hall, G
Pesaresi, M
Raymond, M
author_sort Scandale, W
collection CERN
description The ordered positions of atoms in crystals give a reason to study multiple Coulomb scattering of high energy charged particles within them. In addition, the accurate representation of multiple scattering of high energy protons in a bent crystal is important for studies of crystal assisted collimation at the SPS and the LHC. Multiple scattering of 400 GeV/c protons in bent silicon crystals was measured for orientations far from the directions of main crystallographic planes and axes in conditions excluding channeling of protons. The observed RMS widths of the angular distributions are a little larger than those obtained from the Moliere theory. Simulation of multiple scattering in a model of binary collisions with the crystal atoms shows about 3.5% decrease of the RMS deflection with respect to the model of a sequence of random collisions. We consider this as a possible indication of a reduction of multiple scattering of protons in a crystal in comparison with its amorphous state.
id oai-inspirehep.net-1605912
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2017
record_format invenio
spelling oai-inspirehep.net-16059122019-09-30T06:29:59Zdoi:10.1016/j.nimb.2017.02.060http://cds.cern.ch/record/2275923engScandale, WArduini, GButcher, MCerutti, FGarattini, MGilardoni, SLechner, ALosito, RMasi, AMirarchi, DMontesano, SRedaelli, SRossi, RSchoofs, PSmirnov, GValentino, GBreton, DBurmistrov, LChaumat, VDubos, SMaalmi, JPuill, VStocchi, ABagli, EBandiera, LGermogli, GGuidi, VMazzolari, ADabagov, SMurtas, FAddesa, FCavoto, GIacoangeli, FGalluccio, FAfonin, A GChesnokov, Yu ADurum, A AMaisheev, V ASandomirskiy, Yu EYanovich, A AKovalenko, A DTaratin, A MDenisov, A SGavrikov, Yu AIvanov, Yu MLapina, L PMalyarenko, L GSkorobogatov, V VJames, THall, GPesaresi, MRaymond, MMeasurements of multiple scattering of high energy protons in bent silicon crystalsAccelerators and Storage RingsDetectors and Experimental TechniquesThe ordered positions of atoms in crystals give a reason to study multiple Coulomb scattering of high energy charged particles within them. In addition, the accurate representation of multiple scattering of high energy protons in a bent crystal is important for studies of crystal assisted collimation at the SPS and the LHC. Multiple scattering of 400 GeV/c protons in bent silicon crystals was measured for orientations far from the directions of main crystallographic planes and axes in conditions excluding channeling of protons. The observed RMS widths of the angular distributions are a little larger than those obtained from the Moliere theory. Simulation of multiple scattering in a model of binary collisions with the crystal atoms shows about 3.5% decrease of the RMS deflection with respect to the model of a sequence of random collisions. We consider this as a possible indication of a reduction of multiple scattering of protons in a crystal in comparison with its amorphous state.oai:inspirehep.net:16059122017
spellingShingle Accelerators and Storage Rings
Detectors and Experimental Techniques
Scandale, W
Arduini, G
Butcher, M
Cerutti, F
Garattini, M
Gilardoni, S
Lechner, A
Losito, R
Masi, A
Mirarchi, D
Montesano, S
Redaelli, S
Rossi, R
Schoofs, P
Smirnov, G
Valentino, G
Breton, D
Burmistrov, L
Chaumat, V
Dubos, S
Maalmi, J
Puill, V
Stocchi, A
Bagli, E
Bandiera, L
Germogli, G
Guidi, V
Mazzolari, A
Dabagov, S
Murtas, F
Addesa, F
Cavoto, G
Iacoangeli, F
Galluccio, F
Afonin, A G
Chesnokov, Yu A
Durum, A A
Maisheev, V A
Sandomirskiy, Yu E
Yanovich, A A
Kovalenko, A D
Taratin, A M
Denisov, A S
Gavrikov, Yu A
Ivanov, Yu M
Lapina, L P
Malyarenko, L G
Skorobogatov, V V
James, T
Hall, G
Pesaresi, M
Raymond, M
Measurements of multiple scattering of high energy protons in bent silicon crystals
title Measurements of multiple scattering of high energy protons in bent silicon crystals
title_full Measurements of multiple scattering of high energy protons in bent silicon crystals
title_fullStr Measurements of multiple scattering of high energy protons in bent silicon crystals
title_full_unstemmed Measurements of multiple scattering of high energy protons in bent silicon crystals
title_short Measurements of multiple scattering of high energy protons in bent silicon crystals
title_sort measurements of multiple scattering of high energy protons in bent silicon crystals
topic Accelerators and Storage Rings
Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nimb.2017.02.060
http://cds.cern.ch/record/2275923
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