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Soft errors in commercial off-the-shelf static random access memories
This article reviews state-of-the-art techniques for the evaluation of the effect of radiation on static random access memory (SRAM). We detailed irradiation test techniques and results from irradiation experiments with several types of particles. Two commercial SRAMs, in 90 and 65 nm technology nod...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2017
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1088/1361-6641/32/1/013006 http://cds.cern.ch/record/2274876 |