MOS power transistor and ceramic thyratron for fast high voltage pulser

A high reliability circuit has been developed in order to trigger a ceramic thyratron. The necessity of building a system highly protected from voltage and current glitches is due to the particular loads with are to be driven by the thyratron. In the circuit design, VMOS (both with ‘p’ or ‘n’ channe...

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Detalles Bibliográficos
Autores principales: Beninati, A, Busso, L, Panzieri, D, Tosello, F
Lenguaje:eng
Publicado: 1984
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/0167-5087(84)90380-6
http://cds.cern.ch/record/2275326
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author Beninati, A
Busso, L
Panzieri, D
Tosello, F
author_facet Beninati, A
Busso, L
Panzieri, D
Tosello, F
author_sort Beninati, A
collection CERN
description A high reliability circuit has been developed in order to trigger a ceramic thyratron. The necessity of building a system highly protected from voltage and current glitches is due to the particular loads with are to be driven by the thyratron. In the circuit design, VMOS (both with ‘p’ or ‘n’ channel) and HEXFET transistors have been used. A delay time of about 60 ns between the NIM input signal and the thyratron grid voltage peak has been obtained. The delay between the NIM input signal and the thyratron trigger is about 80 ns. This apparatus has been developed in order to drive a high voltage generator, used with a self-shunted streamer chamber.
id oai-inspirehep.net-1610696
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1984
record_format invenio
spelling oai-inspirehep.net-16106962019-09-30T06:29:59Zdoi:10.1016/0167-5087(84)90380-6http://cds.cern.ch/record/2275326engBeninati, ABusso, LPanzieri, DTosello, FMOS power transistor and ceramic thyratron for fast high voltage pulserDetectors and Experimental TechniquesA high reliability circuit has been developed in order to trigger a ceramic thyratron. The necessity of building a system highly protected from voltage and current glitches is due to the particular loads with are to be driven by the thyratron. In the circuit design, VMOS (both with ‘p’ or ‘n’ channel) and HEXFET transistors have been used. A delay time of about 60 ns between the NIM input signal and the thyratron grid voltage peak has been obtained. The delay between the NIM input signal and the thyratron trigger is about 80 ns. This apparatus has been developed in order to drive a high voltage generator, used with a self-shunted streamer chamber.oai:inspirehep.net:16106961984
spellingShingle Detectors and Experimental Techniques
Beninati, A
Busso, L
Panzieri, D
Tosello, F
MOS power transistor and ceramic thyratron for fast high voltage pulser
title MOS power transistor and ceramic thyratron for fast high voltage pulser
title_full MOS power transistor and ceramic thyratron for fast high voltage pulser
title_fullStr MOS power transistor and ceramic thyratron for fast high voltage pulser
title_full_unstemmed MOS power transistor and ceramic thyratron for fast high voltage pulser
title_short MOS power transistor and ceramic thyratron for fast high voltage pulser
title_sort mos power transistor and ceramic thyratron for fast high voltage pulser
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/0167-5087(84)90380-6
http://cds.cern.ch/record/2275326
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AT bussol mospowertransistorandceramicthyratronforfasthighvoltagepulser
AT panzierid mospowertransistorandceramicthyratronforfasthighvoltagepulser
AT tosellof mospowertransistorandceramicthyratronforfasthighvoltagepulser

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