High fluence effects on silicon detectors: An overview of the state of the art of radiation resistant detector characterisation by the CERN RD50 collaboration

The CERN RD50 collaboration has the aim to investigate radiation hard semiconductor devices for very high luminosity colliders. This is done by looking into four key aspects: Defect/material characterization, detector characterization, new structures and full detector systems. After the Phase II upgrade of the Large Hadron Collider (LHC) the luminosity will increase and therefore the radiation level for the silicon detectors. They have to be able to operate at fluences of up to $2 \times 10^{16} \rm{n}_{eq} / \rm{cm}^2$. To cope with this, new semiconductor sensor technologies have been developed. This article will give a brief overview of the latest results of the RD50 collaboration for the characterization of 3D detectors, HV-CMOS pixel detectors, low gain avalanche detectors (LGAD) and sensors with slim/active edge.