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High fluence effects on silicon detectors: An overview of the state of the art of radiation resistant detector characterisation by the CERN RD50 collaboration
The CERN RD50 collaboration has the aim to investigate radiation hard semiconductor devices for very high luminosity colliders. This is done by looking into four key aspects: Defect/material characterization, detector characterization, new structures and full detector systems. After the Phase II upg...
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| Lenguaje: | eng |
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SISSA
2017
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| Acceso en línea: | https://dx.doi.org/10.22323/1.287.0032 http://cds.cern.ch/record/2634249 |