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Measurement and simulation of electrical properties of SiPM photon detectors
An electrical model for a Silicon-Photomultiplier (SiPM) is adapted and investigated in this thesis. The model parameters (quenching resistance, diode capacitance, quenching capaci- tance and grid capacitance) have been determined using detailed impedance measurements for different SiPMs produced by...
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| Lenguaje: | eng |
| Publicado: |
2017
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| Acceso en línea: | http://cds.cern.ch/record/2286293 |