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Measurement of silicon photomultipliers at different operating points and simulation with GEANT4

A temperature regulation and stabilization system for silicon photomultipliers is de- signed, tested and integrated into an optical test stand. A set of operating parameters of different silicon photomultipliers at various temperatures is obtained by measure- ment. These parameters are the pulse shap...

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Detalles Bibliográficos
Autor principal: Künsken, Andreas
Lenguaje:eng
Publicado: 2017
Materias:
Acceso en línea:http://cds.cern.ch/record/2286294
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author Künsken, Andreas
author_facet Künsken, Andreas
author_sort Künsken, Andreas
collection CERN
description A temperature regulation and stabilization system for silicon photomultipliers is de- signed, tested and integrated into an optical test stand. A set of operating parameters of different silicon photomultipliers at various temperatures is obtained by measure- ment. These parameters are the pulse shape of the signal, the thermal noise rate, the crosstalk probability and the after pulsing probability. For detector simulations a dedicated silicon photomultiplier simulation model in GEANT4 is extended and adapted. This model is then fed with the previously obtained parameters. Subse- quently, the functionality of the model is validated by means of performing the same analysis on the simulation output as before on the measured data. The model proves itself to be capable of simulating all basic features of a silicon photomultiplier.
id oai-inspirehep.net-1623966
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2017
record_format invenio
spelling oai-inspirehep.net-16239662019-09-30T06:29:59Zhttp://cds.cern.ch/record/2286294engKünsken, AndreasMeasurement of silicon photomultipliers at different operating points and simulation with GEANT4Detectors and Experimental TechniquesA temperature regulation and stabilization system for silicon photomultipliers is de- signed, tested and integrated into an optical test stand. A set of operating parameters of different silicon photomultipliers at various temperatures is obtained by measure- ment. These parameters are the pulse shape of the signal, the thermal noise rate, the crosstalk probability and the after pulsing probability. For detector simulations a dedicated silicon photomultiplier simulation model in GEANT4 is extended and adapted. This model is then fed with the previously obtained parameters. Subse- quently, the functionality of the model is validated by means of performing the same analysis on the simulation output as before on the measured data. The model proves itself to be capable of simulating all basic features of a silicon photomultiplier.oai:inspirehep.net:16239662017-09-29T04:24:15Z
spellingShingle Detectors and Experimental Techniques
Künsken, Andreas
Measurement of silicon photomultipliers at different operating points and simulation with GEANT4
title Measurement of silicon photomultipliers at different operating points and simulation with GEANT4
title_full Measurement of silicon photomultipliers at different operating points and simulation with GEANT4
title_fullStr Measurement of silicon photomultipliers at different operating points and simulation with GEANT4
title_full_unstemmed Measurement of silicon photomultipliers at different operating points and simulation with GEANT4
title_short Measurement of silicon photomultipliers at different operating points and simulation with GEANT4
title_sort measurement of silicon photomultipliers at different operating points and simulation with geant4
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/2286294
work_keys_str_mv AT kunskenandreas measurementofsiliconphotomultipliersatdifferentoperatingpointsandsimulationwithgeant4