Cargando…
Development of a silicon bulk radiation damage model for Sentaurus TCAD
This article presents a new bulk radiation damage model for p -type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8×10151...
Autores principales: | , , , , , , , , , , , , , |
---|---|
Lenguaje: | eng |
Publicado: |
2017
|
Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2017.08.042 http://cds.cern.ch/record/2286307 |
_version_ | 1780956060289335296 |
---|---|
author | Folkestad, Å Akiba, K van Beuzekom, M Buchanan, E Collins, P Dall'Occo, E Di Canto, A Evans, T Franco Lima, V García Pardiñas, J Schindler, H Vicente, M Vieites Diaz, M Williams, M |
author_facet | Folkestad, Å Akiba, K van Beuzekom, M Buchanan, E Collins, P Dall'Occo, E Di Canto, A Evans, T Franco Lima, V García Pardiñas, J Schindler, H Vicente, M Vieites Diaz, M Williams, M |
author_sort | Folkestad, Å |
collection | CERN |
description | This article presents a new bulk radiation damage model for p -type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8×10151MeVneq∕cm2 . |
id | oai-inspirehep.net-1624107 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2017 |
record_format | invenio |
spelling | oai-inspirehep.net-16241072019-09-30T06:29:59Zdoi:10.1016/j.nima.2017.08.042http://cds.cern.ch/record/2286307engFolkestad, ÅAkiba, Kvan Beuzekom, MBuchanan, ECollins, PDall'Occo, EDi Canto, AEvans, TFranco Lima, VGarcía Pardiñas, JSchindler, HVicente, MVieites Diaz, MWilliams, MDevelopment of a silicon bulk radiation damage model for Sentaurus TCADDetectors and Experimental TechniquesThis article presents a new bulk radiation damage model for p -type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8×10151MeVneq∕cm2 .oai:inspirehep.net:16241072017 |
spellingShingle | Detectors and Experimental Techniques Folkestad, Å Akiba, K van Beuzekom, M Buchanan, E Collins, P Dall'Occo, E Di Canto, A Evans, T Franco Lima, V García Pardiñas, J Schindler, H Vicente, M Vieites Diaz, M Williams, M Development of a silicon bulk radiation damage model for Sentaurus TCAD |
title | Development of a silicon bulk radiation damage model for Sentaurus TCAD |
title_full | Development of a silicon bulk radiation damage model for Sentaurus TCAD |
title_fullStr | Development of a silicon bulk radiation damage model for Sentaurus TCAD |
title_full_unstemmed | Development of a silicon bulk radiation damage model for Sentaurus TCAD |
title_short | Development of a silicon bulk radiation damage model for Sentaurus TCAD |
title_sort | development of a silicon bulk radiation damage model for sentaurus tcad |
topic | Detectors and Experimental Techniques |
url | https://dx.doi.org/10.1016/j.nima.2017.08.042 http://cds.cern.ch/record/2286307 |
work_keys_str_mv | AT folkestada developmentofasiliconbulkradiationdamagemodelforsentaurustcad AT akibak developmentofasiliconbulkradiationdamagemodelforsentaurustcad AT vanbeuzekomm developmentofasiliconbulkradiationdamagemodelforsentaurustcad AT buchanane developmentofasiliconbulkradiationdamagemodelforsentaurustcad AT collinsp developmentofasiliconbulkradiationdamagemodelforsentaurustcad AT dalloccoe developmentofasiliconbulkradiationdamagemodelforsentaurustcad AT dicantoa developmentofasiliconbulkradiationdamagemodelforsentaurustcad AT evanst developmentofasiliconbulkradiationdamagemodelforsentaurustcad AT francolimav developmentofasiliconbulkradiationdamagemodelforsentaurustcad AT garciapardinasj developmentofasiliconbulkradiationdamagemodelforsentaurustcad AT schindlerh developmentofasiliconbulkradiationdamagemodelforsentaurustcad AT vicentem developmentofasiliconbulkradiationdamagemodelforsentaurustcad AT vieitesdiazm developmentofasiliconbulkradiationdamagemodelforsentaurustcad AT williamsm developmentofasiliconbulkradiationdamagemodelforsentaurustcad |