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Development of a silicon bulk radiation damage model for Sentaurus TCAD

This article presents a new bulk radiation damage model for p -type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8×10151...

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Detalles Bibliográficos
Autores principales: Folkestad, Å, Akiba, K, van Beuzekom, M, Buchanan, E, Collins, P, Dall'Occo, E, Di Canto, A, Evans, T, Franco Lima, V, García Pardiñas, J, Schindler, H, Vicente, M, Vieites Diaz, M, Williams, M
Lenguaje:eng
Publicado: 2017
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2017.08.042
http://cds.cern.ch/record/2286307
_version_ 1780956060289335296
author Folkestad, Å
Akiba, K
van Beuzekom, M
Buchanan, E
Collins, P
Dall'Occo, E
Di Canto, A
Evans, T
Franco Lima, V
García Pardiñas, J
Schindler, H
Vicente, M
Vieites Diaz, M
Williams, M
author_facet Folkestad, Å
Akiba, K
van Beuzekom, M
Buchanan, E
Collins, P
Dall'Occo, E
Di Canto, A
Evans, T
Franco Lima, V
García Pardiñas, J
Schindler, H
Vicente, M
Vieites Diaz, M
Williams, M
author_sort Folkestad, Å
collection CERN
description This article presents a new bulk radiation damage model for p -type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8×10151MeVneq∕cm2 .
id oai-inspirehep.net-1624107
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2017
record_format invenio
spelling oai-inspirehep.net-16241072019-09-30T06:29:59Zdoi:10.1016/j.nima.2017.08.042http://cds.cern.ch/record/2286307engFolkestad, ÅAkiba, Kvan Beuzekom, MBuchanan, ECollins, PDall'Occo, EDi Canto, AEvans, TFranco Lima, VGarcía Pardiñas, JSchindler, HVicente, MVieites Diaz, MWilliams, MDevelopment of a silicon bulk radiation damage model for Sentaurus TCADDetectors and Experimental TechniquesThis article presents a new bulk radiation damage model for p -type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8×10151MeVneq∕cm2 .oai:inspirehep.net:16241072017
spellingShingle Detectors and Experimental Techniques
Folkestad, Å
Akiba, K
van Beuzekom, M
Buchanan, E
Collins, P
Dall'Occo, E
Di Canto, A
Evans, T
Franco Lima, V
García Pardiñas, J
Schindler, H
Vicente, M
Vieites Diaz, M
Williams, M
Development of a silicon bulk radiation damage model for Sentaurus TCAD
title Development of a silicon bulk radiation damage model for Sentaurus TCAD
title_full Development of a silicon bulk radiation damage model for Sentaurus TCAD
title_fullStr Development of a silicon bulk radiation damage model for Sentaurus TCAD
title_full_unstemmed Development of a silicon bulk radiation damage model for Sentaurus TCAD
title_short Development of a silicon bulk radiation damage model for Sentaurus TCAD
title_sort development of a silicon bulk radiation damage model for sentaurus tcad
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nima.2017.08.042
http://cds.cern.ch/record/2286307
work_keys_str_mv AT folkestada developmentofasiliconbulkradiationdamagemodelforsentaurustcad
AT akibak developmentofasiliconbulkradiationdamagemodelforsentaurustcad
AT vanbeuzekomm developmentofasiliconbulkradiationdamagemodelforsentaurustcad
AT buchanane developmentofasiliconbulkradiationdamagemodelforsentaurustcad
AT collinsp developmentofasiliconbulkradiationdamagemodelforsentaurustcad
AT dalloccoe developmentofasiliconbulkradiationdamagemodelforsentaurustcad
AT dicantoa developmentofasiliconbulkradiationdamagemodelforsentaurustcad
AT evanst developmentofasiliconbulkradiationdamagemodelforsentaurustcad
AT francolimav developmentofasiliconbulkradiationdamagemodelforsentaurustcad
AT garciapardinasj developmentofasiliconbulkradiationdamagemodelforsentaurustcad
AT schindlerh developmentofasiliconbulkradiationdamagemodelforsentaurustcad
AT vicentem developmentofasiliconbulkradiationdamagemodelforsentaurustcad
AT vieitesdiazm developmentofasiliconbulkradiationdamagemodelforsentaurustcad
AT williamsm developmentofasiliconbulkradiationdamagemodelforsentaurustcad