Development of a silicon bulk radiation damage model for Sentaurus TCAD

This article presents a new bulk radiation damage model for p -type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8×10151...

Descripción completa

Detalles Bibliográficos
Autores principales: Folkestad, Å, Akiba, K, van Beuzekom, M, Buchanan, E, Collins, P, Dall'Occo, E, Di Canto, A, Evans, T, Franco Lima, V, García Pardiñas, J, Schindler, H, Vicente, M, Vieites Diaz, M, Williams, M
Lenguaje:eng
Publicado: 2017
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2017.08.042
http://cds.cern.ch/record/2286307

Internet

https://dx.doi.org/10.1016/j.nima.2017.08.042
http://cds.cern.ch/record/2286307

Ejemplares similares