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Determination of the Recovery Time of Silicon Photomultipliers
This thesis describes the determination of the recovery time of dierent silicon photo- multipliers. The experimental setup uses two LEDs to rst re all the pixels of the SiPM and then probe the recovery process with a second identical light pulse. The SiPM re- covers with an exponential process with...
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Lenguaje: | eng |
Publicado: |
2017
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Acceso en línea: | http://cds.cern.ch/record/2286309 |
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author | Hallen, Patrick |
author_facet | Hallen, Patrick |
author_sort | Hallen, Patrick |
collection | CERN |
description | This thesis describes the determination of the recovery time of dierent silicon photo-
multipliers. The experimental setup uses two LEDs to rst re all the pixels of the SiPM
and then probe the recovery process with a second identical light pulse. The SiPM re-
covers with an exponential process with two time constants. The recharge of the pixels
attributes to the dominating fast time constant and the recharge of the bulk attributes
to the slow time constant, which dominates the tail of the recovery. The pixel recovery
time is approximately between 7 ns and 50 ns and is smaller for small pixel sizes. The
bulk recovery time is between approximately 100 ns and 200 ns and is more dominant for
a large pixel size. An increase of the recovery time as a function of the overvoltage has
been observed. |
id | oai-inspirehep.net-1624463 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2017 |
record_format | invenio |
spelling | oai-inspirehep.net-16244632019-09-30T06:29:59Zhttp://cds.cern.ch/record/2286309engHallen, PatrickDetermination of the Recovery Time of Silicon PhotomultipliersDetectors and Experimental TechniquesThis thesis describes the determination of the recovery time of dierent silicon photo- multipliers. The experimental setup uses two LEDs to rst re all the pixels of the SiPM and then probe the recovery process with a second identical light pulse. The SiPM re- covers with an exponential process with two time constants. The recharge of the pixels attributes to the dominating fast time constant and the recharge of the bulk attributes to the slow time constant, which dominates the tail of the recovery. The pixel recovery time is approximately between 7 ns and 50 ns and is smaller for small pixel sizes. The bulk recovery time is between approximately 100 ns and 200 ns and is more dominant for a large pixel size. An increase of the recovery time as a function of the overvoltage has been observed.CERN-THESIS-2011-406oai:inspirehep.net:16244632017-09-29T04:25:07Z |
spellingShingle | Detectors and Experimental Techniques Hallen, Patrick Determination of the Recovery Time of Silicon Photomultipliers |
title | Determination of the Recovery Time of Silicon Photomultipliers |
title_full | Determination of the Recovery Time of Silicon Photomultipliers |
title_fullStr | Determination of the Recovery Time of Silicon Photomultipliers |
title_full_unstemmed | Determination of the Recovery Time of Silicon Photomultipliers |
title_short | Determination of the Recovery Time of Silicon Photomultipliers |
title_sort | determination of the recovery time of silicon photomultipliers |
topic | Detectors and Experimental Techniques |
url | http://cds.cern.ch/record/2286309 |
work_keys_str_mv | AT hallenpatrick determinationoftherecoverytimeofsiliconphotomultipliers |