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Determination of the Recovery Time of Silicon Photomultipliers

This thesis describes the determination of the recovery time of dierent silicon photo- multipliers. The experimental setup uses two LEDs to rst re all the pixels of the SiPM and then probe the recovery process with a second identical light pulse. The SiPM re- covers with an exponential process with...

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Autor principal: Hallen, Patrick
Lenguaje:eng
Publicado: 2017
Materias:
Acceso en línea:http://cds.cern.ch/record/2286309
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author Hallen, Patrick
author_facet Hallen, Patrick
author_sort Hallen, Patrick
collection CERN
description This thesis describes the determination of the recovery time of dierent silicon photo- multipliers. The experimental setup uses two LEDs to rst re all the pixels of the SiPM and then probe the recovery process with a second identical light pulse. The SiPM re- covers with an exponential process with two time constants. The recharge of the pixels attributes to the dominating fast time constant and the recharge of the bulk attributes to the slow time constant, which dominates the tail of the recovery. The pixel recovery time is approximately between 7 ns and 50 ns and is smaller for small pixel sizes. The bulk recovery time is between approximately 100 ns and 200 ns and is more dominant for a large pixel size. An increase of the recovery time as a function of the overvoltage has been observed.
id oai-inspirehep.net-1624463
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2017
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spelling oai-inspirehep.net-16244632019-09-30T06:29:59Zhttp://cds.cern.ch/record/2286309engHallen, PatrickDetermination of the Recovery Time of Silicon PhotomultipliersDetectors and Experimental TechniquesThis thesis describes the determination of the recovery time of dierent silicon photo- multipliers. The experimental setup uses two LEDs to rst re all the pixels of the SiPM and then probe the recovery process with a second identical light pulse. The SiPM re- covers with an exponential process with two time constants. The recharge of the pixels attributes to the dominating fast time constant and the recharge of the bulk attributes to the slow time constant, which dominates the tail of the recovery. The pixel recovery time is approximately between 7 ns and 50 ns and is smaller for small pixel sizes. The bulk recovery time is between approximately 100 ns and 200 ns and is more dominant for a large pixel size. An increase of the recovery time as a function of the overvoltage has been observed.CERN-THESIS-2011-406oai:inspirehep.net:16244632017-09-29T04:25:07Z
spellingShingle Detectors and Experimental Techniques
Hallen, Patrick
Determination of the Recovery Time of Silicon Photomultipliers
title Determination of the Recovery Time of Silicon Photomultipliers
title_full Determination of the Recovery Time of Silicon Photomultipliers
title_fullStr Determination of the Recovery Time of Silicon Photomultipliers
title_full_unstemmed Determination of the Recovery Time of Silicon Photomultipliers
title_short Determination of the Recovery Time of Silicon Photomultipliers
title_sort determination of the recovery time of silicon photomultipliers
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/2286309
work_keys_str_mv AT hallenpatrick determinationoftherecoverytimeofsiliconphotomultipliers