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Heat transfer at a sapphire – indium interface in the 30 mK – 300 mK temperature range
Within the framework of the AEgIS (Antimatter Experiment: Gravity, Interferometry, Spectroscopy) project a direct measurement of the Earth's gravitational acceleration on antihydrogen will be carried out. In order to obtain satisfactory precision of the measurement, the thermal movement of the...
Autores principales: | , , , , |
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Lenguaje: | eng |
Publicado: |
2017
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1088/1757-899X/171/1/012088 http://cds.cern.ch/record/2621309 |
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author | Liberadzka, J Koettig, T Bremer, J van der Post, C C W ter Brake, H J M |
author_facet | Liberadzka, J Koettig, T Bremer, J van der Post, C C W ter Brake, H J M |
author_sort | Liberadzka, J |
collection | CERN |
description | Within the framework of the AEgIS (Antimatter Experiment: Gravity, Interferometry, Spectroscopy) project a direct measurement of the Earth's gravitational acceleration on antihydrogen will be carried out. In order to obtain satisfactory precision of the measurement, the thermal movement of the particles should be reduced. Therefore a Penning trap, which is used to trap antiprotons and create antihydrogen, will be placed on a mixing chamber of an especially designed dilution refrigerator. The trap consists of 10 electrodes, which need to be electrically insulated, but thermally anchored. To ensure that the trap remains at a temperature below 100 mK, the heat transfer at the metallic-dielectric boundary is investigated. A copper – indium – sapphire – indium – copper sandwich setup was mounted on the CERN Cryolab dilution refrigerator. Keeping the mixing chamber at a constant low temperature in the range of 30 mK to 300 mK, steady-state measurements with indium in normal conducting and superconducting states have been performed. Obtained results along with a precise description of our setup are presented. |
id | oai-inspirehep.net-1625039 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2017 |
record_format | invenio |
spelling | oai-inspirehep.net-16250392019-10-15T15:19:52Zdoi:10.1088/1757-899X/171/1/012088http://cds.cern.ch/record/2621309engLiberadzka, JKoettig, TBremer, Jvan der Post, C C Wter Brake, H J MHeat transfer at a sapphire – indium interface in the 30 mK – 300 mK temperature rangePhysics in GeneralWithin the framework of the AEgIS (Antimatter Experiment: Gravity, Interferometry, Spectroscopy) project a direct measurement of the Earth's gravitational acceleration on antihydrogen will be carried out. In order to obtain satisfactory precision of the measurement, the thermal movement of the particles should be reduced. Therefore a Penning trap, which is used to trap antiprotons and create antihydrogen, will be placed on a mixing chamber of an especially designed dilution refrigerator. The trap consists of 10 electrodes, which need to be electrically insulated, but thermally anchored. To ensure that the trap remains at a temperature below 100 mK, the heat transfer at the metallic-dielectric boundary is investigated. A copper – indium – sapphire – indium – copper sandwich setup was mounted on the CERN Cryolab dilution refrigerator. Keeping the mixing chamber at a constant low temperature in the range of 30 mK to 300 mK, steady-state measurements with indium in normal conducting and superconducting states have been performed. Obtained results along with a precise description of our setup are presented.oai:inspirehep.net:16250392017 |
spellingShingle | Physics in General Liberadzka, J Koettig, T Bremer, J van der Post, C C W ter Brake, H J M Heat transfer at a sapphire – indium interface in the 30 mK – 300 mK temperature range |
title | Heat transfer at a sapphire – indium interface in the 30 mK – 300 mK temperature range |
title_full | Heat transfer at a sapphire – indium interface in the 30 mK – 300 mK temperature range |
title_fullStr | Heat transfer at a sapphire – indium interface in the 30 mK – 300 mK temperature range |
title_full_unstemmed | Heat transfer at a sapphire – indium interface in the 30 mK – 300 mK temperature range |
title_short | Heat transfer at a sapphire – indium interface in the 30 mK – 300 mK temperature range |
title_sort | heat transfer at a sapphire – indium interface in the 30 mk – 300 mk temperature range |
topic | Physics in General |
url | https://dx.doi.org/10.1088/1757-899X/171/1/012088 http://cds.cern.ch/record/2621309 |
work_keys_str_mv | AT liberadzkaj heattransferatasapphireindiuminterfaceinthe30mk300mktemperaturerange AT koettigt heattransferatasapphireindiuminterfaceinthe30mk300mktemperaturerange AT bremerj heattransferatasapphireindiuminterfaceinthe30mk300mktemperaturerange AT vanderpostccw heattransferatasapphireindiuminterfaceinthe30mk300mktemperaturerange AT terbrakehjm heattransferatasapphireindiuminterfaceinthe30mk300mktemperaturerange |