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Heat transfer at a sapphire – indium interface in the 30 mK – 300 mK temperature range

Within the framework of the AEgIS (Antimatter Experiment: Gravity, Interferometry, Spectroscopy) project a direct measurement of the Earth's gravitational acceleration on antihydrogen will be carried out. In order to obtain satisfactory precision of the measurement, the thermal movement of the...

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Detalles Bibliográficos
Autores principales: Liberadzka, J, Koettig, T, Bremer, J, van der Post, C C W, ter Brake, H J M
Lenguaje:eng
Publicado: 2017
Materias:
Acceso en línea:https://dx.doi.org/10.1088/1757-899X/171/1/012088
http://cds.cern.ch/record/2621309
_version_ 1780958552714641408
author Liberadzka, J
Koettig, T
Bremer, J
van der Post, C C W
ter Brake, H J M
author_facet Liberadzka, J
Koettig, T
Bremer, J
van der Post, C C W
ter Brake, H J M
author_sort Liberadzka, J
collection CERN
description Within the framework of the AEgIS (Antimatter Experiment: Gravity, Interferometry, Spectroscopy) project a direct measurement of the Earth's gravitational acceleration on antihydrogen will be carried out. In order to obtain satisfactory precision of the measurement, the thermal movement of the particles should be reduced. Therefore a Penning trap, which is used to trap antiprotons and create antihydrogen, will be placed on a mixing chamber of an especially designed dilution refrigerator. The trap consists of 10 electrodes, which need to be electrically insulated, but thermally anchored. To ensure that the trap remains at a temperature below 100 mK, the heat transfer at the metallic-dielectric boundary is investigated. A copper – indium – sapphire – indium – copper sandwich setup was mounted on the CERN Cryolab dilution refrigerator. Keeping the mixing chamber at a constant low temperature in the range of 30 mK to 300 mK, steady-state measurements with indium in normal conducting and superconducting states have been performed. Obtained results along with a precise description of our setup are presented.
id oai-inspirehep.net-1625039
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2017
record_format invenio
spelling oai-inspirehep.net-16250392019-10-15T15:19:52Zdoi:10.1088/1757-899X/171/1/012088http://cds.cern.ch/record/2621309engLiberadzka, JKoettig, TBremer, Jvan der Post, C C Wter Brake, H J MHeat transfer at a sapphire – indium interface in the 30 mK – 300 mK temperature rangePhysics in GeneralWithin the framework of the AEgIS (Antimatter Experiment: Gravity, Interferometry, Spectroscopy) project a direct measurement of the Earth's gravitational acceleration on antihydrogen will be carried out. In order to obtain satisfactory precision of the measurement, the thermal movement of the particles should be reduced. Therefore a Penning trap, which is used to trap antiprotons and create antihydrogen, will be placed on a mixing chamber of an especially designed dilution refrigerator. The trap consists of 10 electrodes, which need to be electrically insulated, but thermally anchored. To ensure that the trap remains at a temperature below 100 mK, the heat transfer at the metallic-dielectric boundary is investigated. A copper – indium – sapphire – indium – copper sandwich setup was mounted on the CERN Cryolab dilution refrigerator. Keeping the mixing chamber at a constant low temperature in the range of 30 mK to 300 mK, steady-state measurements with indium in normal conducting and superconducting states have been performed. Obtained results along with a precise description of our setup are presented.oai:inspirehep.net:16250392017
spellingShingle Physics in General
Liberadzka, J
Koettig, T
Bremer, J
van der Post, C C W
ter Brake, H J M
Heat transfer at a sapphire – indium interface in the 30 mK – 300 mK temperature range
title Heat transfer at a sapphire – indium interface in the 30 mK – 300 mK temperature range
title_full Heat transfer at a sapphire – indium interface in the 30 mK – 300 mK temperature range
title_fullStr Heat transfer at a sapphire – indium interface in the 30 mK – 300 mK temperature range
title_full_unstemmed Heat transfer at a sapphire – indium interface in the 30 mK – 300 mK temperature range
title_short Heat transfer at a sapphire – indium interface in the 30 mK – 300 mK temperature range
title_sort heat transfer at a sapphire – indium interface in the 30 mk – 300 mk temperature range
topic Physics in General
url https://dx.doi.org/10.1088/1757-899X/171/1/012088
http://cds.cern.ch/record/2621309
work_keys_str_mv AT liberadzkaj heattransferatasapphireindiuminterfaceinthe30mk300mktemperaturerange
AT koettigt heattransferatasapphireindiuminterfaceinthe30mk300mktemperaturerange
AT bremerj heattransferatasapphireindiuminterfaceinthe30mk300mktemperaturerange
AT vanderpostccw heattransferatasapphireindiuminterfaceinthe30mk300mktemperaturerange
AT terbrakehjm heattransferatasapphireindiuminterfaceinthe30mk300mktemperaturerange