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Measurements of the reverse current of highly irradiated silicon sensors to determine the effective energy and current related damage rate
The reverse current of irradiated silicon sensors leads to self heating of the sensor and degrades the signal to noise ratio of a detector. Precise knowledge of the expected reverse current during detector operation is crucial for planning and running experiments in High Energy Physics. The dependen...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2018
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2017.09.021 http://cds.cern.ch/record/2294507 |