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First fabrication of a silicon vertical JFET for power distribution in high energy physics applications
A new vertical JFET transistor has been recently developed at the IMB-CNM, taking advantage of a deep-trenched 3D technology to achieve vertical conduction and low switch-off voltage. The silicon V-JFET transistors were mainly conceived to work as rad-hard protection switches for the renewed HV powe...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2018
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2017.08.043 http://cds.cern.ch/record/2645746 |