Cargando…
Surface damage characterization of FBK devices for High Luminosity LHC (HL-LHC) operations
The very high fluences (e.g. up to $2 \times 10^{16} 1$ MeV $n_{eq}/cm^{2}$) and total ionising doses (TID) of the order of 1 Grad, expected at the High Luminosity LHC (HL-LHC), impose new challenges for the design of effective, radiation resistant detectors. Ionising energy loss is the dominant eff...
Autores principales: | Moscatelli, F, Passeri, D, Morozzi, A, Dalla Betta, G -F, Mattiazzo, S, Bomben, M, Bilei, G M |
---|---|
Lenguaje: | eng |
Publicado: |
2017
|
Materias: | |
Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/12/12/P12010 http://cds.cern.ch/record/2306353 |
Ejemplares similares
-
The INFN-FBK pixel R&D; program for HL-LHC
por: Meschini, M, et al.
Publicado: (2016) -
LPNHE-FBK Thin n-on-p Pixel Sensors for HL-LHC Upgrade and Beyond
por: Calderini, G, et al.
Publicado: (2021) -
Modeling of Radiation Damage Effects in Silicon Detectors at High Fluences HL-LHC with Sentaurus TCAD
por: Passeri, D., et al.
Publicado: (2016) -
First Production of New Thin 3D Sensors for HL-LHC at FBK
por: Sultan, D.M.S., et al.
Publicado: (2016) -
Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations
por: Moscatelli, F, et al.
Publicado: (2016)