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Characterization of SLVS Driver and Receiver in a 65 nm CMOS Technology for High Energy Physics Applications
This work is concerned with the design and characterization of an SLVS transmitter/receiver pair,to be used for I/O links in High Energy Physics applications. Core transistors with a powersupply of 1.2 V have been considered in the design in order to mitigate the TID effects, due tothe harsh radiati...
Autores principales: | , , , , , |
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Lenguaje: | eng |
Publicado: |
SISSA
2018
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.22323/1.313.0014 http://cds.cern.ch/record/2673784 |
_version_ | 1780962517554561024 |
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author | De Canio, Francesco Gaioni, Luigi Manghisoni, Massimo Ratti, Lodovico Re, Valerio Traversi, Gianluca |
author_facet | De Canio, Francesco Gaioni, Luigi Manghisoni, Massimo Ratti, Lodovico Re, Valerio Traversi, Gianluca |
author_sort | De Canio, Francesco |
collection | CERN |
description | This work is concerned with the design and characterization of an SLVS transmitter/receiver pair,to be used for I/O links in High Energy Physics applications. Core transistors with a powersupply of 1.2 V have been considered in the design in order to mitigate the TID effects, due tothe harsh radiation environment foreseen. The circuits have been implemented in a 65 nm CMOStechnology. The prototype chip was designed and fabricated in the framework of the RD53 projectand was completely characterized in the first quarter of 2016. The chip has been also irradiatedwith X-rays in order to evaluate the effect of the ionizing radiation on the signal integrity |
id | oai-inspirehep.net-1664997 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2018 |
publisher | SISSA |
record_format | invenio |
spelling | oai-inspirehep.net-16649972021-05-03T07:54:11Zdoi:10.22323/1.313.0014http://cds.cern.ch/record/2673784engDe Canio, FrancescoGaioni, LuigiManghisoni, MassimoRatti, LodovicoRe, ValerioTraversi, GianlucaCharacterization of SLVS Driver and Receiver in a 65 nm CMOS Technology for High Energy Physics ApplicationsDetectors and Experimental TechniquesThis work is concerned with the design and characterization of an SLVS transmitter/receiver pair,to be used for I/O links in High Energy Physics applications. Core transistors with a powersupply of 1.2 V have been considered in the design in order to mitigate the TID effects, due tothe harsh radiation environment foreseen. The circuits have been implemented in a 65 nm CMOStechnology. The prototype chip was designed and fabricated in the framework of the RD53 projectand was completely characterized in the first quarter of 2016. The chip has been also irradiatedwith X-rays in order to evaluate the effect of the ionizing radiation on the signal integritySISSAoai:inspirehep.net:16649972018 |
spellingShingle | Detectors and Experimental Techniques De Canio, Francesco Gaioni, Luigi Manghisoni, Massimo Ratti, Lodovico Re, Valerio Traversi, Gianluca Characterization of SLVS Driver and Receiver in a 65 nm CMOS Technology for High Energy Physics Applications |
title | Characterization of SLVS Driver and Receiver in a 65 nm CMOS Technology for High Energy Physics Applications |
title_full | Characterization of SLVS Driver and Receiver in a 65 nm CMOS Technology for High Energy Physics Applications |
title_fullStr | Characterization of SLVS Driver and Receiver in a 65 nm CMOS Technology for High Energy Physics Applications |
title_full_unstemmed | Characterization of SLVS Driver and Receiver in a 65 nm CMOS Technology for High Energy Physics Applications |
title_short | Characterization of SLVS Driver and Receiver in a 65 nm CMOS Technology for High Energy Physics Applications |
title_sort | characterization of slvs driver and receiver in a 65 nm cmos technology for high energy physics applications |
topic | Detectors and Experimental Techniques |
url | https://dx.doi.org/10.22323/1.313.0014 http://cds.cern.ch/record/2673784 |
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