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LAPA, a 5 Gb/s modular pseudo-LVDS driver in 180 nm CMOS with capacitively coupled pre-emphasis
A pseudo-LVDS driver has been designed in a 180 nm technology for operation up to 5 Gb/s.It contains parallel main driver units based on an H-bridge circuit steering a current on an external load. The number of active units is adjustable, to reduce switching capacitance and static current, and hence...
Autores principales: | , , , , , , , |
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Lenguaje: | eng |
Publicado: |
SISSA
2017
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.22323/1.313.0038 http://cds.cern.ch/record/2312590 |
Sumario: | A pseudo-LVDS driver has been designed in a 180 nm technology for operation up to 5 Gb/s.It contains parallel main driver units based on an H-bridge circuit steering a current on an external load. The number of active units is adjustable, to reduce switching capacitance and static current, and hence power consumption, if a smaller current swing can be tolerated.Pre-emphasis is applied with a capacitively coupled charge-injection circuit. In the nominal condition with a steering current of 4 mA over a 100 $\Omega$ termination resistor, it consumes 30 mW from a 1.8 V supply. |
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