Cargando…

LAPA, a 5 Gb/s modular pseudo-LVDS driver in 180 nm CMOS with capacitively coupled pre-emphasis

A pseudo-LVDS driver has been designed in a 180 nm technology for operation up to 5 Gb/s.It contains parallel main driver units based on an H-bridge circuit steering a current on an external load. The number of active units is adjustable, to reduce switching capacitance and static current, and hence...

Descripción completa

Detalles Bibliográficos
Autores principales:	Cardella, Roberto, Berdalovic, Ivan, Egidos Plaja, Nuria, Kugathasan, Thanushan, Marin Tobon, Cesar Augusto, Pernegger, Heinz, Riedler, Petra, Snoeys, Walter
Lenguaje:	eng
Publicado:	SISSA 2017
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.22323/1.313.0038 http://cds.cern.ch/record/2312590

Ejemplares similares

Monolithic pixel development in 180 nm CMOS for the outer pixel layers in the ATLAS experiment
por: Kugathasan, Thanushan, et al.
Publicado: (2017)

Monolithic pixel development in TowerJazz 180 nm CMOS for the outer pixel layers in the ATLAS experiment
por: Berdalovic, I, et al.
Publicado: (2018)

Development and characterization of a DMAPS chip in TowerJazz 180 nm technology for high radiation environments
por: Bespin, Christian, et al.
Publicado: (2022)

Update on the TowerJazz CMOS DMAPS development for the ATLAS ITk
por: Dachs, Florian, et al.
Publicado: (2019)

Depleted Monolithic Active Pixel Sensors in the LFoundry 150 nm and TowerJazz 180 nm CMOS Technologies
por: Wang, T, et al.
Publicado: (2020)

Design of large scale sensors in 180 nm CMOS process modified for radiation tolerance
por: Flores Sanz de Acedo, L, et al.
Publicado: (2020)

CMOS Monolithic Pixel Sensors based on the Column-Drain Architecture for the HL-LHC Upgrade
por: Moustakas, K., et al.
Publicado: (2018)

Design and Test with Proton Beam of a 1.2 Gb/s Semi-custom Serialiser Implemented in 180 nm CMOS with SEU Mitigation by TMR
por: Lupi, Matteo, et al.
Publicado: (2017)

Development of the monolithic "MALTA" CMOS sensor for the ATLAS ITK outer pixel layer
por: Hiti, Bojan, et al.
Publicado: (2019)

Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180 nm CMOS technology
por: Bespin, Christian, et al.
Publicado: (2023)

MALTA: a CMOS pixel sensor with asynchronous readout for the ATLAS High-Luminosity upgrade
por: Berdalovic, Ivan, et al.
Publicado: (2019)

The MALTA CMOS pixel detector prototype for the ATLAS Pixel ITk
por: Sharma, A, et al.
Publicado: (2019)

A 60 μW front-end for 10 ps resolution monolithic pixel sensors in a 130nm SiGe BiCMOS process
por: Picardi, Antonio, et al.
Publicado: (2023)

Simulations of CMOS pixel sensors with a small collection electrode, improved for a faster charge collection and increased radiation tolerance
por: Munker, Magdalena, et al.
Publicado: (2019)

Review on depleted CMOS
por: Kugathasan, Thanushan
Publicado: (2019)

La Lapa /
por: Guerra, Angel, 1874-1950
Publicado: (1996)

Progress in DMAPS developments and first tests of the Monopix2 chips in 150 nm LFoundry and 180 nm TowerJazz technology
por: Dingfelder, J, et al.
Publicado: (2022)

Monolithic CMOS sensors for sub-nanosecond timing
por: Kugathasan, Thanushan, et al.
Publicado: (2020)

Design of a Capacitance-to-Digital Converter Based on Iterative Delay-Chain Discharge in 180 nm CMOS Technology
por: Cicalini, Mattia, et al.
Publicado: (2021)

Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade
por: Wang, T., et al.
Publicado: (2017)

MALTA: an asynchronous readout CMOS monolithic pixel detector for the ATLAS High-Luminosity upgrade
por: Cardella, R, et al.
Publicado: (2019)

X-Ray measurements of radiation hard monolithic CMOS sensors at Diamond Light Source
por: Mironova, Maria, et al.
Publicado: (2019)

Radiation hardness and timing performance in MALTA monolithic pixel sensors in TowerJazz 180 nm
por: van Rijnbach, M, et al.
Publicado: (2022)

Design of a monolithic HR-CMOS sensor chip for the CLIC silicon tracker
por: Kremastiotis, Iraklis, et al.
Publicado: (2019)

Monolithic pixel development in TowerJazz 180 nm CMOS for the outer pixel layers in the ATLAS experiment
por: Pernegger, H
Publicado: (2019)

Performance of capacitively coupled active pixel sensors in 180 nm HV-CMOS technology after irradiation to HL-LHC fluences
por: Feigl, S.
Publicado: (2014)

A CMOS 0.18 μm 600 MHz clock multiplier PLL and a pseudo-LVDS driver for the high speed data transmission for the ALICE Inner Tracking System front-end chip
por: Lattuca, A, et al.
Publicado: (2016)

Latest developments and characterisation results of the MALTA sensors in TowerJazz 180nm for High Luminosity LHC
por: Sharma, Abhishek, et al.
Publicado: (2022)

Performance of the FASTPIX Sub-Nanosecond CMOS Pixel Sensor Demonstrator
por: Braach, Justus, et al.
Publicado: (2022)

Measurement of the relative response of small-electrode CMOS sensors at Diamond Light Source
por: Mironova, M, et al.
Publicado: (2020)

CLICTD: A monolithic HR-CMOS sensor chip for the CLIC silicon tracker
por: Kremastiotis, Iraklis, et al.
Publicado: (2019)

Studies for low mass, large area monolithic silicon pixel detector modules using the MALTA CMOS pixel chip
por: Riedler, P, et al.
Publicado: (2021)

High-speed bipolar phototransistors in a 180 nm CMOS process
por: Kostov, P., et al.
Publicado: (2013)

Latest developments and characterisation results of DMAPS in TowerJazz 180nm for High Luminosity LHC
por: de Acedo, L Flores Sanz, et al.
Publicado: (2022)

Transmission of isolated LVDS signal pulses at long distance
por: Scapparone, E, et al.
Publicado: (2010)

Design of a MEMS-Based Oscillator Using 180nm CMOS Technology
por: Roy, Sukanta, et al.
Publicado: (2016)

Test-beam Performance Results of the FASTPIX Sub-Nanosecond CMOS Pixel Sensor Demonstrator
por: Braach, Justus, et al.
Publicado: (2023)

Shunt Regulator for the Serial Powering of the ATLAS CMOS Pixel Detector Modules
por: Habib, A, et al.
Publicado: (2020)

Charge collection properties of TowerJazz 180 nm CMOS Pixel Sensors in dependence of pixel geometries and bias parameters, studied using a dedicated test-vehicle: the Investigator chip
por: Aglieri Rinella, G., et al.
Publicado: (2020)

A 16-channel Silicon Strips Readout Chip in 180nm CMOS technology
por: Genat, Jean-François, et al.
Publicado: (2005)

Cannot write session to /tmp/vufind_sessions/sess_i5km2gve7ckm04j7g3miq6kqhn