A study of SEU-tolerant latches for the RD53A chip

The RD53 collaboration was established to develop the next generation of pixel readout chips needed by ATLAS and CMS at the HL-LHC and requiring extreme rate and radiation tolerance. The 65 nm CMOS process has been adopted in order to satisfy the high level of integration requirement. However, the SEU immunity should be carefully considered for a deep submicron process like the 65 nm. Indeed, the device dimensions are small and the capacitance of the storage nodes becomes very low. A chip prototype including different SEU tolerant structures was designed in a 65 nm technology. Several proton irradiation tests were carried out in order to estimate the SEU tolerance of the proposed structures and the level of improvement comparing with a standard architecture.