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Analysis of SEL on Commercial SRAM Memories and Mixed-Field Characterization of a Latchup Detection Circuit For LEO Space Applications

A single event latchup (SEL) experiment based on commercial static random access memory (SRAM) memories has recently been proposed in the framework of the European Organization for Nuclear Research (CERN) Latchup Experiment and Student Satellite nanosatellite low Earth orbit (LEO) space mission. SEL...

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Detalles Bibliográficos
Autores principales:	Secondo, Raffaello, Alía, Ruben, Peronnard, Paul, Brugger, Markus, Masi, Alessandro, Danzeca, Salvatore, Merlenghi, Anne-Sophie, Vaillé, Jean-Roch, Dusseau, Laurent
Lenguaje:	eng
Publicado:	2017
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1109/TNS.2017.2691403 http://cds.cern.ch/record/2312297

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