Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory

This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pa...

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Detalles Bibliográficos
Autores principales: Bosser, A L, Gupta, V, Javanainen, A, Tsiligiannis, G, La Lumondiere, S D, Brewe, D, Ferlet-Cavrois, V, Puchner, H, Kettunen, H, Gil, T, Wrobel, F, Saigné, F, Virtanen, A, Dilillo, L
Lenguaje:eng
Publicado: 2018
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/TNS.2018.2797543
http://cds.cern.ch/record/2645089
Descripción
Sumario:This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed.

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