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Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory
This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pa...
| Autores principales: | , , , , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2018
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2018.2797543 http://cds.cern.ch/record/2645089 |
| _version_ | 1780960463035564032 |
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| author | Bosser, A L Gupta, V Javanainen, A Tsiligiannis, G La Lumondiere, S D Brewe, D Ferlet-Cavrois, V Puchner, H Kettunen, H Gil, T Wrobel, F Saigné, F Virtanen, A Dilillo, L |
| author_facet | Bosser, A L Gupta, V Javanainen, A Tsiligiannis, G La Lumondiere, S D Brewe, D Ferlet-Cavrois, V Puchner, H Kettunen, H Gil, T Wrobel, F Saigné, F Virtanen, A Dilillo, L |
| author_sort | Bosser, A L |
| collection | CERN |
| description | This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed. |
| id | oai-inspirehep.net-1665806 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2018 |
| record_format | invenio |
| spelling | oai-inspirehep.net-16658062022-11-17T15:10:24Zdoi:10.1109/TNS.2018.2797543http://cds.cern.ch/record/2645089engBosser, A LGupta, VJavanainen, ATsiligiannis, GLa Lumondiere, S DBrewe, DFerlet-Cavrois, VPuchner, HKettunen, HGil, TWrobel, FSaigné, FVirtanen, ADilillo, LSingle-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access MemoryDetectors and Experimental TechniquesThis paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed.oai:inspirehep.net:16658062018 |
| spellingShingle | Detectors and Experimental Techniques Bosser, A L Gupta, V Javanainen, A Tsiligiannis, G La Lumondiere, S D Brewe, D Ferlet-Cavrois, V Puchner, H Kettunen, H Gil, T Wrobel, F Saigné, F Virtanen, A Dilillo, L Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory |
| title | Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory |
| title_full | Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory |
| title_fullStr | Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory |
| title_full_unstemmed | Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory |
| title_short | Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory |
| title_sort | single-event effects in the peripheral circuitry of a commercial ferroelectric random-access memory |
| topic | Detectors and Experimental Techniques |
| url | https://dx.doi.org/10.1109/TNS.2018.2797543 http://cds.cern.ch/record/2645089 |
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