Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory

This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pa...

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Detalles Bibliográficos
Autores principales: Bosser, A L, Gupta, V, Javanainen, A, Tsiligiannis, G, La Lumondiere, S D, Brewe, D, Ferlet-Cavrois, V, Puchner, H, Kettunen, H, Gil, T, Wrobel, F, Saigné, F, Virtanen, A, Dilillo, L
Lenguaje:eng
Publicado: 2018
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/TNS.2018.2797543
http://cds.cern.ch/record/2645089

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