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Optical properties and radiation hardness of Pr-doped sol-gel silica: Influence of fiber drawing process

The optical emission from the 5d – 4f allowed transition of Pr$^{3+}$ ions embedded in sol-gel silica is investigated for High Energy Physics applications requiring fast scintillating materials. A complete and detailed characterization of the optical, scintillation and radiation hardness properties...

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Detalles Bibliográficos
Autores principales: Cova, Francesca, Fasoli, Mauro, Moretti, Federico, Chiodini, Norberto, Pauwels, Kristof, Auffray, Etiennette, Toliman Lucchini, Marco, Bourret, Edith, Veronese, Ivan, d'Ippolito, Eduardo, Vedda, Anna
Lenguaje:eng
Publicado: 2017
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.jlumin.2017.07.045
http://cds.cern.ch/record/2318930
Descripción
Sumario:The optical emission from the 5d – 4f allowed transition of Pr$^{3+}$ ions embedded in sol-gel silica is investigated for High Energy Physics applications requiring fast scintillating materials. A complete and detailed characterization of the optical, scintillation and radiation hardness properties of Pr-doped silica is carried out employing different experimental techniques including steady-state and time-resolved photo-luminescence, radio- and thermo-luminescence, scintillation and optical absorption. Optical absorption measurements, performed after X-ray irradiation sequences up to 1 kGy, evidence the formation of radiation-induced absorption bands related to point defects acting as color centers. Spontaneous partial recovery of the radiation-induced defects at room temperature, as well as after thermal treatments, is also disclosed. Particular attention is paid to the comparison between bulk silica, both before and after a melting process, and fibers. The results reveal the presence of a lower concentration of optically active defects in melted glass. Such comparison highlights a role of the fiber drawing in modifying the glass defectiveness, consisting in the occurrence of a structural reorganization of the amorphous network during the process.