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Comparison of a 65 nm CMOS Ring- and LC-Oscillator Based PLL in Terms of TID and SEU Sensitivity

In this work, a comparison has been made between a low noise ring-oscillator and an LC-oscillator Phase Locked Loop (PLL). An ASIC has been developed to conduct irradiation experiments targeting high-energy physics applications. Two different samples were irradiated up to a total ionizing dose (TID)...

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Autores principales: Prinzie, Jeffrey, Christiansen, Jorgen, Moreira, Paulo, Steyaert, Michiel, Leroux, Paul
Lenguaje:eng
Publicado: 2017
Materias:
Acceso en línea:https://dx.doi.org/10.1109/TNS.2016.2616919
http://cds.cern.ch/record/2320844
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author Prinzie, Jeffrey
Christiansen, Jorgen
Moreira, Paulo
Steyaert, Michiel
Leroux, Paul
author_facet Prinzie, Jeffrey
Christiansen, Jorgen
Moreira, Paulo
Steyaert, Michiel
Leroux, Paul
author_sort Prinzie, Jeffrey
collection CERN
description In this work, a comparison has been made between a low noise ring-oscillator and an LC-oscillator Phase Locked Loop (PLL). An ASIC has been developed to conduct irradiation experiments targeting high-energy physics applications. Two different samples were irradiated up to a total ionizing dose (TID) in SiO2 of 200 Mrad and 600 Mrad with a 100°C thermal annealing step. Single-Event Upset (SEU) tests were performed with heavy ions with LETs (Linear Energy Transfer) between 3.2 and 69.2 MeV.cm2/mg. A Two-photon absorption (TPA) laser facility has been used to provide detailed results on the SEU sensitivity. Both independent PLLs have identical loop dynamics to allow a fair comparison including a Triple-Modular Redundant (TMR) divider and TMR phase detector. Furthermore these circuits consume the same amount of power. The PLLs were processed in a commercial 65 nm CMOS technology.
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language eng
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spelling oai-inspirehep.net-16750112019-09-30T06:29:59Zdoi:10.1109/TNS.2016.2616919http://cds.cern.ch/record/2320844engPrinzie, JeffreyChristiansen, JorgenMoreira, PauloSteyaert, MichielLeroux, PaulComparison of a 65 nm CMOS Ring- and LC-Oscillator Based PLL in Terms of TID and SEU SensitivityDetectors and Experimental TechniquesIn this work, a comparison has been made between a low noise ring-oscillator and an LC-oscillator Phase Locked Loop (PLL). An ASIC has been developed to conduct irradiation experiments targeting high-energy physics applications. Two different samples were irradiated up to a total ionizing dose (TID) in SiO2 of 200 Mrad and 600 Mrad with a 100°C thermal annealing step. Single-Event Upset (SEU) tests were performed with heavy ions with LETs (Linear Energy Transfer) between 3.2 and 69.2 MeV.cm2/mg. A Two-photon absorption (TPA) laser facility has been used to provide detailed results on the SEU sensitivity. Both independent PLLs have identical loop dynamics to allow a fair comparison including a Triple-Modular Redundant (TMR) divider and TMR phase detector. Furthermore these circuits consume the same amount of power. The PLLs were processed in a commercial 65 nm CMOS technology.oai:inspirehep.net:16750112017
spellingShingle Detectors and Experimental Techniques
Prinzie, Jeffrey
Christiansen, Jorgen
Moreira, Paulo
Steyaert, Michiel
Leroux, Paul
Comparison of a 65 nm CMOS Ring- and LC-Oscillator Based PLL in Terms of TID and SEU Sensitivity
title Comparison of a 65 nm CMOS Ring- and LC-Oscillator Based PLL in Terms of TID and SEU Sensitivity
title_full Comparison of a 65 nm CMOS Ring- and LC-Oscillator Based PLL in Terms of TID and SEU Sensitivity
title_fullStr Comparison of a 65 nm CMOS Ring- and LC-Oscillator Based PLL in Terms of TID and SEU Sensitivity
title_full_unstemmed Comparison of a 65 nm CMOS Ring- and LC-Oscillator Based PLL in Terms of TID and SEU Sensitivity
title_short Comparison of a 65 nm CMOS Ring- and LC-Oscillator Based PLL in Terms of TID and SEU Sensitivity
title_sort comparison of a 65 nm cmos ring- and lc-oscillator based pll in terms of tid and seu sensitivity
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1109/TNS.2016.2616919
http://cds.cern.ch/record/2320844
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