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Comparison of a 65 nm CMOS Ring- and LC-Oscillator Based PLL in Terms of TID and SEU Sensitivity
In this work, a comparison has been made between a low noise ring-oscillator and an LC-oscillator Phase Locked Loop (PLL). An ASIC has been developed to conduct irradiation experiments targeting high-energy physics applications. Two different samples were irradiated up to a total ionizing dose (TID)...
Autores principales: | , , , , |
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Lenguaje: | eng |
Publicado: |
2017
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1109/TNS.2016.2616919 http://cds.cern.ch/record/2320844 |
_version_ | 1780958564759633920 |
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author | Prinzie, Jeffrey Christiansen, Jorgen Moreira, Paulo Steyaert, Michiel Leroux, Paul |
author_facet | Prinzie, Jeffrey Christiansen, Jorgen Moreira, Paulo Steyaert, Michiel Leroux, Paul |
author_sort | Prinzie, Jeffrey |
collection | CERN |
description | In this work, a comparison has been made between a low noise ring-oscillator and an LC-oscillator Phase Locked Loop (PLL). An ASIC has been developed to conduct irradiation experiments targeting high-energy physics applications. Two different samples were irradiated up to a total ionizing dose (TID) in SiO2 of 200 Mrad and 600 Mrad with a 100°C thermal annealing step. Single-Event Upset (SEU) tests were performed with heavy ions with LETs (Linear Energy Transfer) between 3.2 and 69.2 MeV.cm2/mg. A Two-photon absorption (TPA) laser facility has been used to provide detailed results on the SEU sensitivity. Both independent PLLs have identical loop dynamics to allow a fair comparison including a Triple-Modular Redundant (TMR) divider and TMR phase detector. Furthermore these circuits consume the same amount of power. The PLLs were processed in a commercial 65 nm CMOS technology. |
id | oai-inspirehep.net-1675011 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2017 |
record_format | invenio |
spelling | oai-inspirehep.net-16750112019-09-30T06:29:59Zdoi:10.1109/TNS.2016.2616919http://cds.cern.ch/record/2320844engPrinzie, JeffreyChristiansen, JorgenMoreira, PauloSteyaert, MichielLeroux, PaulComparison of a 65 nm CMOS Ring- and LC-Oscillator Based PLL in Terms of TID and SEU SensitivityDetectors and Experimental TechniquesIn this work, a comparison has been made between a low noise ring-oscillator and an LC-oscillator Phase Locked Loop (PLL). An ASIC has been developed to conduct irradiation experiments targeting high-energy physics applications. Two different samples were irradiated up to a total ionizing dose (TID) in SiO2 of 200 Mrad and 600 Mrad with a 100°C thermal annealing step. Single-Event Upset (SEU) tests were performed with heavy ions with LETs (Linear Energy Transfer) between 3.2 and 69.2 MeV.cm2/mg. A Two-photon absorption (TPA) laser facility has been used to provide detailed results on the SEU sensitivity. Both independent PLLs have identical loop dynamics to allow a fair comparison including a Triple-Modular Redundant (TMR) divider and TMR phase detector. Furthermore these circuits consume the same amount of power. The PLLs were processed in a commercial 65 nm CMOS technology.oai:inspirehep.net:16750112017 |
spellingShingle | Detectors and Experimental Techniques Prinzie, Jeffrey Christiansen, Jorgen Moreira, Paulo Steyaert, Michiel Leroux, Paul Comparison of a 65 nm CMOS Ring- and LC-Oscillator Based PLL in Terms of TID and SEU Sensitivity |
title | Comparison of a 65 nm CMOS Ring- and LC-Oscillator Based PLL in Terms of TID and SEU Sensitivity |
title_full | Comparison of a 65 nm CMOS Ring- and LC-Oscillator Based PLL in Terms of TID and SEU Sensitivity |
title_fullStr | Comparison of a 65 nm CMOS Ring- and LC-Oscillator Based PLL in Terms of TID and SEU Sensitivity |
title_full_unstemmed | Comparison of a 65 nm CMOS Ring- and LC-Oscillator Based PLL in Terms of TID and SEU Sensitivity |
title_short | Comparison of a 65 nm CMOS Ring- and LC-Oscillator Based PLL in Terms of TID and SEU Sensitivity |
title_sort | comparison of a 65 nm cmos ring- and lc-oscillator based pll in terms of tid and seu sensitivity |
topic | Detectors and Experimental Techniques |
url | https://dx.doi.org/10.1109/TNS.2016.2616919 http://cds.cern.ch/record/2320844 |
work_keys_str_mv | AT prinziejeffrey comparisonofa65nmcmosringandlcoscillatorbasedpllintermsoftidandseusensitivity AT christiansenjorgen comparisonofa65nmcmosringandlcoscillatorbasedpllintermsoftidandseusensitivity AT moreirapaulo comparisonofa65nmcmosringandlcoscillatorbasedpllintermsoftidandseusensitivity AT steyaertmichiel comparisonofa65nmcmosringandlcoscillatorbasedpllintermsoftidandseusensitivity AT lerouxpaul comparisonofa65nmcmosringandlcoscillatorbasedpllintermsoftidandseusensitivity |