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Modelling of proton irradiated GaN-based high-power white light-emitting diodes
We report the effects of high-energy (23 GeV) proton irradiation at large fluences on packaged high-power GaN-based white light-emitting diodes with YAG:Ce phosphors. From optical and electrical measurements, we assume that proton irradiation degrades only the GaN LED die up to fluences of at least...
| Autores principales: | , |
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| Lenguaje: | eng |
| Publicado: |
2018
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.7567/JJAP.57.080304 http://cds.cern.ch/record/2631517 |