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A High-Resolution Clock Phase-Shifter in a 65 nm CMOS Technology

The design of a high-resolution phase-shifter which is part of the LpGBT, a low power upgrade of the gigabit transceiver (GBTX) for the LHC upgrade program, is presented. The phase-shifter circuit aims at producing a programmable phase rotation (up to 360°) with a time resolution of 48.8 ps for seve...

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Autores principales: Yang, Dongxu, Kulis, Szymon, Gong, Datao, Ye, Jingbo, Moreira, Paulo, Wang, Jian
Lenguaje:eng
Publicado: 2018
Materias:
Acceso en línea:https://dx.doi.org/10.1007/978-981-13-1313-4_32
http://cds.cern.ch/record/2643295
_version_ 1780960363334860800
author Yang, Dongxu
Kulis, Szymon
Gong, Datao
Ye, Jingbo
Moreira, Paulo
Wang, Jian
author_facet Yang, Dongxu
Kulis, Szymon
Gong, Datao
Ye, Jingbo
Moreira, Paulo
Wang, Jian
author_sort Yang, Dongxu
collection CERN
description The design of a high-resolution phase-shifter which is part of the LpGBT, a low power upgrade of the gigabit transceiver (GBTX) for the LHC upgrade program, is presented. The phase-shifter circuit aims at producing a programmable phase rotation (up to 360°) with a time resolution of 48.8 ps for several input clock frequencies: 40, 80, 160, 320, 640 or 1280 MHz. The circuit is implemented as two functional blocks: a coarse phase-shifter, with a fully digital implementation, and fine phase-shifter, based on a Delay-Locked Loop (DLL). The post-layout simulations show that the peak-to-peak values of INL and DNL are 0.1 and 0.06 LSB (48.8 ps) respectively at 1.28 GHz in the nominal corner while at 40 MHz the values are 0.06 and 0.05 LSB respectively. The phase-shifter has been designed as a radiation-tolerant circuit by means of enclosed layout transistors (ELT) in a 65 nm CMOS technology to achieve high resolution and reduced power dissipation. The typical power dissipation of the fine phase-shifter at the lowest and the highest frequencies are 1.1 mW and 9.1 mW respectively at 1.2 V supply voltage.
id oai-inspirehep.net-1687316
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2018
record_format invenio
spelling oai-inspirehep.net-16873162019-09-30T06:29:59Zdoi:10.1007/978-981-13-1313-4_32http://cds.cern.ch/record/2643295engYang, DongxuKulis, SzymonGong, DataoYe, JingboMoreira, PauloWang, JianA High-Resolution Clock Phase-Shifter in a 65 nm CMOS TechnologyDetectors and Experimental TechniquesThe design of a high-resolution phase-shifter which is part of the LpGBT, a low power upgrade of the gigabit transceiver (GBTX) for the LHC upgrade program, is presented. The phase-shifter circuit aims at producing a programmable phase rotation (up to 360°) with a time resolution of 48.8 ps for several input clock frequencies: 40, 80, 160, 320, 640 or 1280 MHz. The circuit is implemented as two functional blocks: a coarse phase-shifter, with a fully digital implementation, and fine phase-shifter, based on a Delay-Locked Loop (DLL). The post-layout simulations show that the peak-to-peak values of INL and DNL are 0.1 and 0.06 LSB (48.8 ps) respectively at 1.28 GHz in the nominal corner while at 40 MHz the values are 0.06 and 0.05 LSB respectively. The phase-shifter has been designed as a radiation-tolerant circuit by means of enclosed layout transistors (ELT) in a 65 nm CMOS technology to achieve high resolution and reduced power dissipation. The typical power dissipation of the fine phase-shifter at the lowest and the highest frequencies are 1.1 mW and 9.1 mW respectively at 1.2 V supply voltage.oai:inspirehep.net:16873162018
spellingShingle Detectors and Experimental Techniques
Yang, Dongxu
Kulis, Szymon
Gong, Datao
Ye, Jingbo
Moreira, Paulo
Wang, Jian
A High-Resolution Clock Phase-Shifter in a 65 nm CMOS Technology
title A High-Resolution Clock Phase-Shifter in a 65 nm CMOS Technology
title_full A High-Resolution Clock Phase-Shifter in a 65 nm CMOS Technology
title_fullStr A High-Resolution Clock Phase-Shifter in a 65 nm CMOS Technology
title_full_unstemmed A High-Resolution Clock Phase-Shifter in a 65 nm CMOS Technology
title_short A High-Resolution Clock Phase-Shifter in a 65 nm CMOS Technology
title_sort high-resolution clock phase-shifter in a 65 nm cmos technology
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1007/978-981-13-1313-4_32
http://cds.cern.ch/record/2643295
work_keys_str_mv AT yangdongxu ahighresolutionclockphaseshifterina65nmcmostechnology
AT kulisszymon ahighresolutionclockphaseshifterina65nmcmostechnology
AT gongdatao ahighresolutionclockphaseshifterina65nmcmostechnology
AT yejingbo ahighresolutionclockphaseshifterina65nmcmostechnology
AT moreirapaulo ahighresolutionclockphaseshifterina65nmcmostechnology
AT wangjian ahighresolutionclockphaseshifterina65nmcmostechnology
AT yangdongxu highresolutionclockphaseshifterina65nmcmostechnology
AT kulisszymon highresolutionclockphaseshifterina65nmcmostechnology
AT gongdatao highresolutionclockphaseshifterina65nmcmostechnology
AT yejingbo highresolutionclockphaseshifterina65nmcmostechnology
AT moreirapaulo highresolutionclockphaseshifterina65nmcmostechnology
AT wangjian highresolutionclockphaseshifterina65nmcmostechnology