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Anneal induced transformations of defects in hadron irradiated Si wafers and Schottky diodes
In this research, the anneal induced transformations of radiation defects have been studied in n-type and p-type CZ and FZ Si samples, irradiated with relativistic protons (24 GeV/c) and pions (300 MeV/c) using particle fluences up to $3 \times 10^{16}$ cm$^{−2}$. The temperature dependent carrier t...
| Autores principales: | , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2018
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.mssp.2017.11.035 http://cds.cern.ch/record/2667189 |