Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles

New findings on the self-interstitial migration in p-type silicon are presented. They are based on experimental studies of the formation kinetics of defects related to interstitial carbon after irradiation with alpha particles. The main parameters characterizing the interaction rate of silicon self-...

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Detalles Bibliográficos
Autores principales: Makarenko, L F, Moll, M, Evans-Freeman, J H, Lastovski, S B, Murin, L I, Korshunov, F P
Lenguaje:eng
Publicado: 2011
Materias:
Other
Acceso en línea:https://dx.doi.org/10.1016/j.physb.2011.08.101
http://cds.cern.ch/record/2655905
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author Makarenko, L F
Moll, M
Evans-Freeman, J H
Lastovski, S B
Murin, L I
Korshunov, F P
author_facet Makarenko, L F
Moll, M
Evans-Freeman, J H
Lastovski, S B
Murin, L I
Korshunov, F P
author_sort Makarenko, L F
collection CERN
description New findings on the self-interstitial migration in p-type silicon are presented. They are based on experimental studies of the formation kinetics of defects related to interstitial carbon after irradiation with alpha particles. The main parameters characterizing the interaction rate of silicon self-interstitials with substitutional carbon atoms have been determined. A preliminary interpretation of the experimental data is given. The interpretation takes into account different diffusivities of self-interstitials in their singly and doubly ionized states.
id oai-inspirehep.net-1688993
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2011
record_format invenio
spelling oai-inspirehep.net-16889932019-09-30T06:29:59Zdoi:10.1016/j.physb.2011.08.101http://cds.cern.ch/record/2655905engMakarenko, L FMoll, MEvans-Freeman, J HLastovski, S BMurin, L IKorshunov, F PKinetics of self-interstitials reactions in p-type silicon irradiated with alpha particlesOtherNew findings on the self-interstitial migration in p-type silicon are presented. They are based on experimental studies of the formation kinetics of defects related to interstitial carbon after irradiation with alpha particles. The main parameters characterizing the interaction rate of silicon self-interstitials with substitutional carbon atoms have been determined. A preliminary interpretation of the experimental data is given. The interpretation takes into account different diffusivities of self-interstitials in their singly and doubly ionized states.oai:inspirehep.net:16889932011
spellingShingle Other
Makarenko, L F
Moll, M
Evans-Freeman, J H
Lastovski, S B
Murin, L I
Korshunov, F P
Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles
title Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles
title_full Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles
title_fullStr Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles
title_full_unstemmed Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles
title_short Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles
title_sort kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles
topic Other
url https://dx.doi.org/10.1016/j.physb.2011.08.101
http://cds.cern.ch/record/2655905
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AT lastovskisb kineticsofselfinterstitialsreactionsinptypesiliconirradiatedwithalphaparticles
AT murinli kineticsofselfinterstitialsreactionsinptypesiliconirradiatedwithalphaparticles
AT korshunovfp kineticsofselfinterstitialsreactionsinptypesiliconirradiatedwithalphaparticles

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