Cargando…
Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles
New findings on the self-interstitial migration in p-type silicon are presented. They are based on experimental studies of the formation kinetics of defects related to interstitial carbon after irradiation with alpha particles. The main parameters characterizing the interaction rate of silicon self-...
| Autores principales: | , , , , , |
|---|---|
| Lenguaje: | eng |
| Publicado: |
2011
|
| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.physb.2011.08.101 http://cds.cern.ch/record/2655905 |