DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon

DLTS studies of transformation kinetics of different carbon–related complexes in electron irradiated n- and p-type silicon have been performed. It has been found that silicon self-interstitials have very low mobility even at room temperature in p-Si, but become extremely mobile under elec-tron injec...

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Detalles Bibliográficos
Autores principales: Makarenko, L F, Korshunov, F P, Lastovskii, Stanislav B, Murin, L I, Moll, Michael
Lenguaje:eng
Publicado: 2009
Materias:
Other
Acceso en línea:https://dx.doi.org/10.4028/www.scientific.net/SSP.156-158.155
http://cds.cern.ch/record/2655799

Internet

https://dx.doi.org/10.4028/www.scientific.net/SSP.156-158.155
http://cds.cern.ch/record/2655799

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