Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n$^+$–p structures

New findings on the formation and annealing of interstitial boron-interstitial oxygen complex ($\rm{B_iO_i}$) in p-type silicon are presented. Different types of n+−p structures irradiated with electrons and alpha-particles have been used for DLTS and MCTS studies. Electronic excitation essentially changes the formation rate of $\rm{B_iO_i}$. It has been found that the increase of oxygen content slows the $\rm{B_iO_i}$ annealing rate down. The activation energy of the $\rm{B_iO_i}$ dissociation has been determined and it was found that germanium doping does not change the activation energy.