Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n$^+$–p structures

New findings on the formation and annealing of interstitial boron-interstitial oxygen complex ($\rm{B_iO_i}$) in p-type silicon are presented. Different types of n+−p structures irradiated with electrons and alpha-particles have been used for DLTS and MCTS studies. Electronic excitation essentially...

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Detalles Bibliográficos
Autores principales: Makarenko, L F, Lastovskii, S B, Korshunov, F P, Moll, M, Pintilie, I, Abrosimov, N V
Lenguaje:eng
Publicado: 2015
Materias:
Other
Acceso en línea:https://dx.doi.org/10.1063/1.4865618
http://cds.cern.ch/record/2635822
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author Makarenko, L F
Lastovskii, S B
Korshunov, F P
Moll, M
Pintilie, I
Abrosimov, N V
author_facet Makarenko, L F
Lastovskii, S B
Korshunov, F P
Moll, M
Pintilie, I
Abrosimov, N V
author_sort Makarenko, L F
collection CERN
description New findings on the formation and annealing of interstitial boron-interstitial oxygen complex ($\rm{B_iO_i}$) in p-type silicon are presented. Different types of n+−p structures irradiated with electrons and alpha-particles have been used for DLTS and MCTS studies. Electronic excitation essentially changes the formation rate of $\rm{B_iO_i}$. It has been found that the increase of oxygen content slows the $\rm{B_iO_i}$ annealing rate down. The activation energy of the $\rm{B_iO_i}$ dissociation has been determined and it was found that germanium doping does not change the activation energy.
id oai-inspirehep.net-1689123
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2015
record_format invenio
spelling oai-inspirehep.net-16891232019-09-30T06:29:59Zdoi:10.1063/1.4865618http://cds.cern.ch/record/2635822engMakarenko, L FLastovskii, S BKorshunov, F PMoll, MPintilie, IAbrosimov, N VFormation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n$^+$–p structuresOtherNew findings on the formation and annealing of interstitial boron-interstitial oxygen complex ($\rm{B_iO_i}$) in p-type silicon are presented. Different types of n+−p structures irradiated with electrons and alpha-particles have been used for DLTS and MCTS studies. Electronic excitation essentially changes the formation rate of $\rm{B_iO_i}$. It has been found that the increase of oxygen content slows the $\rm{B_iO_i}$ annealing rate down. The activation energy of the $\rm{B_iO_i}$ dissociation has been determined and it was found that germanium doping does not change the activation energy.oai:inspirehep.net:16891232015
spellingShingle Other
Makarenko, L F
Lastovskii, S B
Korshunov, F P
Moll, M
Pintilie, I
Abrosimov, N V
Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n$^+$–p structures
title Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n$^+$–p structures
title_full Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n$^+$–p structures
title_fullStr Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n$^+$–p structures
title_full_unstemmed Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n$^+$–p structures
title_short Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n$^+$–p structures
title_sort formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n$^+$–p structures
topic Other
url https://dx.doi.org/10.1063/1.4865618
http://cds.cern.ch/record/2635822
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AT lastovskiisb formationandannealingofboronoxygendefectsinirradiatedsiliconandsilicongermaniumnpstructures
AT korshunovfp formationandannealingofboronoxygendefectsinirradiatedsiliconandsilicongermaniumnpstructures
AT mollm formationandannealingofboronoxygendefectsinirradiatedsiliconandsilicongermaniumnpstructures
AT pintiliei formationandannealingofboronoxygendefectsinirradiatedsiliconandsilicongermaniumnpstructures
AT abrosimovnv formationandannealingofboronoxygendefectsinirradiatedsiliconandsilicongermaniumnpstructures

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