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Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n$^+$–p structures
New findings on the formation and annealing of interstitial boron-interstitial oxygen complex ($\rm{B_iO_i}$) in p-type silicon are presented. Different types of n+−p structures irradiated with electrons and alpha-particles have been used for DLTS and MCTS studies. Electronic excitation essentially...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2015
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1063/1.4865618 http://cds.cern.ch/record/2635822 |