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Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen
Comparative studies employing Deep Level Transient Spectroscopy and C-V measurements have been performed on recombination-enhanced reactions between defects of interstitial type in boron doped silicon diodes irradiated with alpha-particles. It has been shown that self-interstitial related defects wh...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2018
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1063/1.5010965 http://cds.cern.ch/record/2635823 |