Extending a 65nm CMOS process design kit for high total ionizing dose effects

Standard CMOS Process Design Kits (PDKs) do not address degradation the technology incurs when exposed to high Total Ionizing Dose (TID). Front-end electronics for the High-Luminosity Large Hadron Collider are expected to be exposed up to ten-fold doses. Bulk CMOS at 65 nm is a strong contender for...

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Detalles Bibliográficos
Autores principales: Nikolaou, Aristeidis, Bucher, Matthias, Makris, Nikos, Papadopoulou, Alexia, Chevas, Loukas, Borghello, Giulio, Koch, Henri D, Kloukinas, Kostas, Poikela, Tuomas S, Faccio, Federico
Lenguaje:eng
Publicado: 2018
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/MOCAST.2018.8376561
http://cds.cern.ch/record/2646286
_version_ 1780960575687229440
author Nikolaou, Aristeidis
Bucher, Matthias
Makris, Nikos
Papadopoulou, Alexia
Chevas, Loukas
Borghello, Giulio
Koch, Henri D
Kloukinas, Kostas
Poikela, Tuomas S
Faccio, Federico
author_facet Nikolaou, Aristeidis
Bucher, Matthias
Makris, Nikos
Papadopoulou, Alexia
Chevas, Loukas
Borghello, Giulio
Koch, Henri D
Kloukinas, Kostas
Poikela, Tuomas S
Faccio, Federico
author_sort Nikolaou, Aristeidis
collection CERN
description Standard CMOS Process Design Kits (PDKs) do not address degradation the technology incurs when exposed to high Total Ionizing Dose (TID). Front-end electronics for the High-Luminosity Large Hadron Collider are expected to be exposed up to ten-fold doses. Bulk CMOS at 65 nm is a strong contender for such electronics due to a favorable trade-off among cost, performance, and TID-sensitivity. The present paper presents the extension of a foundry-provided PDK to cover also high TID effects. TID experiments have been carried out up to 500 Mrad. The PDK is based on binned BSIM4 models, which are adapted to different TID levels. Hence, designers may choose among different TID levels for their designs, contributing importantly to radiation-hard design practice.
id oai-inspirehep.net-1689304
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2018
record_format invenio
spelling oai-inspirehep.net-16893042019-09-30T06:29:59Zdoi:10.1109/MOCAST.2018.8376561http://cds.cern.ch/record/2646286engNikolaou, AristeidisBucher, MatthiasMakris, NikosPapadopoulou, AlexiaChevas, LoukasBorghello, GiulioKoch, Henri DKloukinas, KostasPoikela, Tuomas SFaccio, FedericoExtending a 65nm CMOS process design kit for high total ionizing dose effectsDetectors and Experimental TechniquesStandard CMOS Process Design Kits (PDKs) do not address degradation the technology incurs when exposed to high Total Ionizing Dose (TID). Front-end electronics for the High-Luminosity Large Hadron Collider are expected to be exposed up to ten-fold doses. Bulk CMOS at 65 nm is a strong contender for such electronics due to a favorable trade-off among cost, performance, and TID-sensitivity. The present paper presents the extension of a foundry-provided PDK to cover also high TID effects. TID experiments have been carried out up to 500 Mrad. The PDK is based on binned BSIM4 models, which are adapted to different TID levels. Hence, designers may choose among different TID levels for their designs, contributing importantly to radiation-hard design practice.oai:inspirehep.net:16893042018
spellingShingle Detectors and Experimental Techniques
Nikolaou, Aristeidis
Bucher, Matthias
Makris, Nikos
Papadopoulou, Alexia
Chevas, Loukas
Borghello, Giulio
Koch, Henri D
Kloukinas, Kostas
Poikela, Tuomas S
Faccio, Federico
Extending a 65nm CMOS process design kit for high total ionizing dose effects
title Extending a 65nm CMOS process design kit for high total ionizing dose effects
title_full Extending a 65nm CMOS process design kit for high total ionizing dose effects
title_fullStr Extending a 65nm CMOS process design kit for high total ionizing dose effects
title_full_unstemmed Extending a 65nm CMOS process design kit for high total ionizing dose effects
title_short Extending a 65nm CMOS process design kit for high total ionizing dose effects
title_sort extending a 65nm cmos process design kit for high total ionizing dose effects
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1109/MOCAST.2018.8376561
http://cds.cern.ch/record/2646286
work_keys_str_mv AT nikolaouaristeidis extendinga65nmcmosprocessdesignkitforhightotalionizingdoseeffects
AT buchermatthias extendinga65nmcmosprocessdesignkitforhightotalionizingdoseeffects
AT makrisnikos extendinga65nmcmosprocessdesignkitforhightotalionizingdoseeffects
AT papadopouloualexia extendinga65nmcmosprocessdesignkitforhightotalionizingdoseeffects
AT chevasloukas extendinga65nmcmosprocessdesignkitforhightotalionizingdoseeffects
AT borghellogiulio extendinga65nmcmosprocessdesignkitforhightotalionizingdoseeffects
AT kochhenrid extendinga65nmcmosprocessdesignkitforhightotalionizingdoseeffects
AT kloukinaskostas extendinga65nmcmosprocessdesignkitforhightotalionizingdoseeffects
AT poikelatuomass extendinga65nmcmosprocessdesignkitforhightotalionizingdoseeffects
AT facciofederico extendinga65nmcmosprocessdesignkitforhightotalionizingdoseeffects

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