Extending a 65nm CMOS process design kit for high total ionizing dose effects

Standard CMOS Process Design Kits (PDKs) do not address degradation the technology incurs when exposed to high Total Ionizing Dose (TID). Front-end electronics for the High-Luminosity Large Hadron Collider are expected to be exposed up to ten-fold doses. Bulk CMOS at 65 nm is a strong contender for...

Descripción completa

Detalles Bibliográficos
Autores principales: Nikolaou, Aristeidis, Bucher, Matthias, Makris, Nikos, Papadopoulou, Alexia, Chevas, Loukas, Borghello, Giulio, Koch, Henri D, Kloukinas, Kostas, Poikela, Tuomas S, Faccio, Federico
Lenguaje:eng
Publicado: 2018
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/MOCAST.2018.8376561
http://cds.cern.ch/record/2646286

Internet

https://dx.doi.org/10.1109/MOCAST.2018.8376561
http://cds.cern.ch/record/2646286

Ejemplares similares