Investigation of charge multiplication in single crystalline CVD diamond particle detectors

A special metallization pattern was created on a single crystalline diamond detector aimed at creating high enough electric field for impact ionization in the detector material. Electric field line focusing through electrode design and very high bias voltages were used to obtain high electric fields. Previous measurements and theoretical calculations indicated that drifting charge multiplication by impact ionization could take place. A large increase of induced charge was observed for the smallest dot electrode which points to charge multiplication while for the large dot and pad detector structure no such effect was observed. The evolution of induced currents was also monitored with the transient current technique. Induced current pulses with duration of order 1 $\mu$s were measured. The multiplication gain was found to depend on the particle rate.