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Charge collection in irradiated HV-CMOS detectors
Active silicon detectors built on p-type substrate are a promising technological solution for large area silicon trackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has to be evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with dif...
| Autores principales: | , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
Elsevier
2019
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2018.07.022 http://cds.cern.ch/record/2717417 |
| _version_ | 1780965700521689088 |
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| author | Hiti, B Affolder, A Arndt, K Bates, R Benoit, M Di Bello, F Blue, A Bortoletto, D Buckland, M Buttar, C Caragiulo, P Das, D Doering, D Dopke, J Dragone, A Ehrler, F Fadeyev, V Fedorko, W Galloway, Z Gay, C Grabas, H Gregor, I M Grenier, P Grillo, A Han, Y Hoeferkamp, M Hommels, L B A Huffman, T John, J Kanisauskas, K Kenney, C Kramberger, G Liang, Z Mandić, I Maneuski, D Martinez-Mckinney, F McMahon, S Meng, L Mikuž, M Muenstermann, D Nickerson, R Peric, I Phillips, P Plackett, R Rubbo, F Ruckman, L Segal, J Seidel, S Seiden, A Shipsey, I Song, W Stanitzki, M Su, D Tamma, C Turchetta, R Vigani, L Volk, J Wang, R Warren, M Wilson, F Worm, S Xiu, Q Zhang, J Zhu, H |
| author_facet | Hiti, B Affolder, A Arndt, K Bates, R Benoit, M Di Bello, F Blue, A Bortoletto, D Buckland, M Buttar, C Caragiulo, P Das, D Doering, D Dopke, J Dragone, A Ehrler, F Fadeyev, V Fedorko, W Galloway, Z Gay, C Grabas, H Gregor, I M Grenier, P Grillo, A Han, Y Hoeferkamp, M Hommels, L B A Huffman, T John, J Kanisauskas, K Kenney, C Kramberger, G Liang, Z Mandić, I Maneuski, D Martinez-Mckinney, F McMahon, S Meng, L Mikuž, M Muenstermann, D Nickerson, R Peric, I Phillips, P Plackett, R Rubbo, F Ruckman, L Segal, J Seidel, S Seiden, A Shipsey, I Song, W Stanitzki, M Su, D Tamma, C Turchetta, R Vigani, L Volk, J Wang, R Warren, M Wilson, F Worm, S Xiu, Q Zhang, J Zhu, H |
| author_sort | Hiti, B |
| collection | CERN |
| description | Active silicon detectors built on p-type substrate are a promising technological solution for large area silicon trackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has to be evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities in the range of 20–1000 Ωcm were irradiated with neutrons and protons up to a fluence of 2×10$^{15} $n$_{eq}$ cm$^{-2}$ and 3.6×10$^{15} $n$_{eq}$ cm$^{-2}$ . Charge collection in passive test structures on the chip was evaluated using Edge-TCT and minimum ionising electrons from $^{90}$Sr. Results were used to assess radiation hardness of the detector in the given fluence range and to determine parameters of initial acceptor removal in different substrates. |
| id | oai-inspirehep.net-1727072 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2019 |
| publisher | Elsevier |
| record_format | invenio |
| spelling | oai-inspirehep.net-17270722020-05-25T10:00:13Zdoi:10.1016/j.nima.2018.07.022http://cds.cern.ch/record/2717417engHiti, BAffolder, AArndt, KBates, RBenoit, MDi Bello, FBlue, ABortoletto, DBuckland, MButtar, CCaragiulo, PDas, DDoering, DDopke, JDragone, AEhrler, FFadeyev, VFedorko, WGalloway, ZGay, CGrabas, HGregor, I MGrenier, PGrillo, AHan, YHoeferkamp, MHommels, L B AHuffman, TJohn, JKanisauskas, KKenney, CKramberger, GLiang, ZMandić, IManeuski, DMartinez-Mckinney, FMcMahon, SMeng, LMikuž, MMuenstermann, DNickerson, RPeric, IPhillips, PPlackett, RRubbo, FRuckman, LSegal, JSeidel, SSeiden, AShipsey, ISong, WStanitzki, MSu, DTamma, CTurchetta, RVigani, LVolk, JWang, RWarren, MWilson, FWorm, SXiu, QZhang, JZhu, HCharge collection in irradiated HV-CMOS detectorsDetectors and Experimental TechniquesActive silicon detectors built on p-type substrate are a promising technological solution for large area silicon trackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has to be evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities in the range of 20–1000 Ωcm were irradiated with neutrons and protons up to a fluence of 2×10$^{15} $n$_{eq}$ cm$^{-2}$ and 3.6×10$^{15} $n$_{eq}$ cm$^{-2}$ . Charge collection in passive test structures on the chip was evaluated using Edge-TCT and minimum ionising electrons from $^{90}$Sr. Results were used to assess radiation hardness of the detector in the given fluence range and to determine parameters of initial acceptor removal in different substrates.Elsevieroai:inspirehep.net:17270722019 |
| spellingShingle | Detectors and Experimental Techniques Hiti, B Affolder, A Arndt, K Bates, R Benoit, M Di Bello, F Blue, A Bortoletto, D Buckland, M Buttar, C Caragiulo, P Das, D Doering, D Dopke, J Dragone, A Ehrler, F Fadeyev, V Fedorko, W Galloway, Z Gay, C Grabas, H Gregor, I M Grenier, P Grillo, A Han, Y Hoeferkamp, M Hommels, L B A Huffman, T John, J Kanisauskas, K Kenney, C Kramberger, G Liang, Z Mandić, I Maneuski, D Martinez-Mckinney, F McMahon, S Meng, L Mikuž, M Muenstermann, D Nickerson, R Peric, I Phillips, P Plackett, R Rubbo, F Ruckman, L Segal, J Seidel, S Seiden, A Shipsey, I Song, W Stanitzki, M Su, D Tamma, C Turchetta, R Vigani, L Volk, J Wang, R Warren, M Wilson, F Worm, S Xiu, Q Zhang, J Zhu, H Charge collection in irradiated HV-CMOS detectors |
| title | Charge collection in irradiated HV-CMOS detectors |
| title_full | Charge collection in irradiated HV-CMOS detectors |
| title_fullStr | Charge collection in irradiated HV-CMOS detectors |
| title_full_unstemmed | Charge collection in irradiated HV-CMOS detectors |
| title_short | Charge collection in irradiated HV-CMOS detectors |
| title_sort | charge collection in irradiated hv-cmos detectors |
| topic | Detectors and Experimental Techniques |
| url | https://dx.doi.org/10.1016/j.nima.2018.07.022 http://cds.cern.ch/record/2717417 |
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