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Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs

This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad(SiO$_2$) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk CMOS process. Experimental comparisons among individual nMOSFETs of various sizes provide insight into the TID-induced l...

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Detalles Bibliográficos
Autores principales:	Zhang, Chun-Min, Jazaeri, Farzan, Borghello, Giulio, Faccio, Federico, Mattiazzo, Serena, Baschirotto, Andrea, Enz, Christian
Lenguaje:	eng
Publicado:	2018
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1109/TNS.2018.2878105 http://cds.cern.ch/record/2669513

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