Cargando…
Dynamic quadrupole interactions in semiconductors
The time differential perturbed angular correlation, TDPAC, technique has been used for several decades to study electric quadrupole hyperfine interactions in semiconductors such as dynamic quadrupole interactions (DQI) resulting from after-effects of the nuclear decay as well as static quadrupole i...
Autores principales: | , , , |
---|---|
Lenguaje: | eng |
Publicado: |
2018
|
Materias: | |
Acceso en línea: | https://dx.doi.org/10.1063/1.4993714 http://cds.cern.ch/record/2674861 |
_version_ | 1780962635927257088 |
---|---|
author | Dang, Thien Thanh Schell, Juliana Lupascu, Doru C Vianden, Reiner |
author_facet | Dang, Thien Thanh Schell, Juliana Lupascu, Doru C Vianden, Reiner |
author_sort | Dang, Thien Thanh |
collection | CERN |
description | The time differential perturbed angular correlation, TDPAC, technique has been used for several decades to study electric quadrupole hyperfine interactions in semiconductors such as dynamic quadrupole interactions (DQI) resulting from after-effects of the nuclear decay as well as static quadrupole interactions originating from static defects around the probe nuclei such as interstitial ions, stresses in the crystalline structure, and impurities. Nowadays, the quality of the available semiconductor materials is much better, allowing us to study purely dynamic interactions. We present TDPAC measurements on pure Si, Ge, GaAs, and InP as a function of temperature between 12 K and 110 K. The probe ¹¹¹In (¹¹¹Cd) was used. Implantation damage was recovered by thermal annealing. Si experienced the strongest DQI with lifetime, τg, increasing with rising temperature, followed by Ge. In contrast, InP and GaAs, which have larger band gaps and less electron concentration than Si and Ge in the same temperature range, presented no DQI. The results obtained also allow us to conclude that indirect band gap semiconductors showed the dynamic interaction, whereas the direct band gap semiconductors, restricted to GaAs and InP, did not. |
id | oai-inspirehep.net-1731701 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2018 |
record_format | invenio |
spelling | oai-inspirehep.net-17317012019-09-30T06:29:59Zdoi:10.1063/1.4993714http://cds.cern.ch/record/2674861engDang, Thien ThanhSchell, JulianaLupascu, Doru CVianden, ReinerDynamic quadrupole interactions in semiconductorsDetectors and Experimental TechniquesThe time differential perturbed angular correlation, TDPAC, technique has been used for several decades to study electric quadrupole hyperfine interactions in semiconductors such as dynamic quadrupole interactions (DQI) resulting from after-effects of the nuclear decay as well as static quadrupole interactions originating from static defects around the probe nuclei such as interstitial ions, stresses in the crystalline structure, and impurities. Nowadays, the quality of the available semiconductor materials is much better, allowing us to study purely dynamic interactions. We present TDPAC measurements on pure Si, Ge, GaAs, and InP as a function of temperature between 12 K and 110 K. The probe ¹¹¹In (¹¹¹Cd) was used. Implantation damage was recovered by thermal annealing. Si experienced the strongest DQI with lifetime, τg, increasing with rising temperature, followed by Ge. In contrast, InP and GaAs, which have larger band gaps and less electron concentration than Si and Ge in the same temperature range, presented no DQI. The results obtained also allow us to conclude that indirect band gap semiconductors showed the dynamic interaction, whereas the direct band gap semiconductors, restricted to GaAs and InP, did not.oai:inspirehep.net:17317012018 |
spellingShingle | Detectors and Experimental Techniques Dang, Thien Thanh Schell, Juliana Lupascu, Doru C Vianden, Reiner Dynamic quadrupole interactions in semiconductors |
title | Dynamic quadrupole interactions in semiconductors |
title_full | Dynamic quadrupole interactions in semiconductors |
title_fullStr | Dynamic quadrupole interactions in semiconductors |
title_full_unstemmed | Dynamic quadrupole interactions in semiconductors |
title_short | Dynamic quadrupole interactions in semiconductors |
title_sort | dynamic quadrupole interactions in semiconductors |
topic | Detectors and Experimental Techniques |
url | https://dx.doi.org/10.1063/1.4993714 http://cds.cern.ch/record/2674861 |
work_keys_str_mv | AT dangthienthanh dynamicquadrupoleinteractionsinsemiconductors AT schelljuliana dynamicquadrupoleinteractionsinsemiconductors AT lupascudoruc dynamicquadrupoleinteractionsinsemiconductors AT viandenreiner dynamicquadrupoleinteractionsinsemiconductors |