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Optimal Physical Implementation of Radiation Tolerant High-Speed Digital Integrated Circuits in Deep-Submicron Technologies

This paper presents a novel scalable physical implementation method for high-speed Triple Modular Redundant (TMR) digital integrated circuits in radiation-hard designs. The implementation uses a distributed placement strategy compared to a commonly used bulk 3-bank constraining method. TMR netlist i...

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Detalles Bibliográficos
Autores principales: Prinzie, Jeffrey, Appels, Karel, Kulis, Szymon
Lenguaje:eng
Publicado: 2019
Materias:
Acceso en línea:https://dx.doi.org/10.3390/electronics8040432
http://cds.cern.ch/record/2692479
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author Prinzie, Jeffrey
Appels, Karel
Kulis, Szymon
author_facet Prinzie, Jeffrey
Appels, Karel
Kulis, Szymon
author_sort Prinzie, Jeffrey
collection CERN
description This paper presents a novel scalable physical implementation method for high-speed Triple Modular Redundant (TMR) digital integrated circuits in radiation-hard designs. The implementation uses a distributed placement strategy compared to a commonly used bulk 3-bank constraining method. TMR netlist information is used to optimally constrain the placement of both sequential cells and combinational cells. This approach significantly reduces routing complexity, net lengths and dynamic power consumption with more than 60% and 20% respectively. The technique was simulated in a 65 nm Complementary Metal-Oxide Semiconductor (CMOS) technology.
id oai-inspirehep.net-1738619
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2019
record_format invenio
spelling oai-inspirehep.net-17386192022-08-10T12:25:15Zdoi:10.3390/electronics8040432http://cds.cern.ch/record/2692479engPrinzie, JeffreyAppels, KarelKulis, SzymonOptimal Physical Implementation of Radiation Tolerant High-Speed Digital Integrated Circuits in Deep-Submicron TechnologiesDetectors and Experimental TechniquesThis paper presents a novel scalable physical implementation method for high-speed Triple Modular Redundant (TMR) digital integrated circuits in radiation-hard designs. The implementation uses a distributed placement strategy compared to a commonly used bulk 3-bank constraining method. TMR netlist information is used to optimally constrain the placement of both sequential cells and combinational cells. This approach significantly reduces routing complexity, net lengths and dynamic power consumption with more than 60% and 20% respectively. The technique was simulated in a 65 nm Complementary Metal-Oxide Semiconductor (CMOS) technology.oai:inspirehep.net:17386192019
spellingShingle Detectors and Experimental Techniques
Prinzie, Jeffrey
Appels, Karel
Kulis, Szymon
Optimal Physical Implementation of Radiation Tolerant High-Speed Digital Integrated Circuits in Deep-Submicron Technologies
title Optimal Physical Implementation of Radiation Tolerant High-Speed Digital Integrated Circuits in Deep-Submicron Technologies
title_full Optimal Physical Implementation of Radiation Tolerant High-Speed Digital Integrated Circuits in Deep-Submicron Technologies
title_fullStr Optimal Physical Implementation of Radiation Tolerant High-Speed Digital Integrated Circuits in Deep-Submicron Technologies
title_full_unstemmed Optimal Physical Implementation of Radiation Tolerant High-Speed Digital Integrated Circuits in Deep-Submicron Technologies
title_short Optimal Physical Implementation of Radiation Tolerant High-Speed Digital Integrated Circuits in Deep-Submicron Technologies
title_sort optimal physical implementation of radiation tolerant high-speed digital integrated circuits in deep-submicron technologies
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.3390/electronics8040432
http://cds.cern.ch/record/2692479
work_keys_str_mv AT prinziejeffrey optimalphysicalimplementationofradiationtoleranthighspeeddigitalintegratedcircuitsindeepsubmicrontechnologies
AT appelskarel optimalphysicalimplementationofradiationtoleranthighspeeddigitalintegratedcircuitsindeepsubmicrontechnologies
AT kulisszymon optimalphysicalimplementationofradiationtoleranthighspeeddigitalintegratedcircuitsindeepsubmicrontechnologies