Active-edge FBK-INFN-LPNHE thin n-on-p pixel sensors for the upgrade of the ATLAS Inner Tracker

In view of the LHC upgrade for the High Luminosity phase (HL-LHC), the ATLAS experiment plans to replace the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost...

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Detalles Bibliográficos
Autores principales: Calderini, G, Bomben, M, D' Eramo, L, Ducourthial, A, Luise, I, Marchiori, G, Boscardin, G, Ronchin, S, Zorzi, N, Bosisio, L, Dalla Betta, G F, Darbo, G, Giacomini, G, Meschini, M, Messineo, A
Lenguaje:eng
Publicado: Elsevier  2019
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2018.10.035
http://cds.cern.ch/record/2717576
Descripción
Sumario:In view of the LHC upgrade for the High Luminosity phase (HL-LHC), the ATLAS experiment plans to replace the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of thin 100 and 130μm n-in-p planar pixel sensors produced by FBK-CMM with active-edge technology in collaboration with LPNHE and INFN. Beam-test results are presented, with focus on the hit efficiency at the detector edge of a novel design consisting of a staggered deep trench.

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