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Radiation hard Depleted Monolithic Active Pixel Sensors with high-resistivity substrates

High Voltage/High resistivity Depleted Monolithic Active Pixel Sensors (HV/HR-DMAPS) is a technology which is becoming of great interest for high energy physics applications.With respect to hybrid pixel detectors the monolithic approach offers the main advantages of reduced material budget and produ...

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Autores principales: Terzo, Stefano, Benoit, Mathieu, Cavallaro, Emanuele, Casanova, Raimon, Foerster, Fabian, Grinstein, Sebastian, Iacobucci, Giuseppe, Peric, Ivan, Puigdengoles, Carles, Vilella, Eva
Lenguaje:eng
Publicado: SISSA 2019
Materias:
Acceso en línea:https://dx.doi.org/10.22323/1.343.0125
http://cds.cern.ch/record/2710217
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author Terzo, Stefano
Benoit, Mathieu
Cavallaro, Emanuele
Casanova, Raimon
Foerster, Fabian
Grinstein, Sebastian
Iacobucci, Giuseppe
Peric, Ivan
Puigdengoles, Carles
Vilella, Eva
author_facet Terzo, Stefano
Benoit, Mathieu
Cavallaro, Emanuele
Casanova, Raimon
Foerster, Fabian
Grinstein, Sebastian
Iacobucci, Giuseppe
Peric, Ivan
Puigdengoles, Carles
Vilella, Eva
author_sort Terzo, Stefano
collection CERN
description High Voltage/High resistivity Depleted Monolithic Active Pixel Sensors (HV/HR-DMAPS) is a technology which is becoming of great interest for high energy physics applications.With respect to hybrid pixel detectors the monolithic approach offers the main advantages of reduced material budget and production costs due to the absence of the bump bonding process. This aspect is important especially when large areas need to be covered as in the tracking detectors of the LHC experiments. Thus, the possibility of employing this technology in the outermost layers of the upgraded ATLAS pixel detector at the HL-LHC is being investigated.Different HR/HV-DMAPS prototypes have been recently developed for the future ATLAS Inner Tracker (ITk) with the aim of studying their radiation hardness and the feasibility of producing large area devices.The H35DEMO is a large area demonstrator chip for the ITk designed by KIT, IFAE and University of Liverpool and produced in AMS 350 nm HV-CMOS technology with an engineering run on four different substrate resistivities: 20, 80, 200 and 1000 $\mathrm{\Omega cm}$. It consists of four large matrices, two of which include digital electronics and are thus fully monolithic. One, called CMOS matrix, has comparators made of CMOS transistors in the periphery only, while the other, called NMOS matrix, includes also comparators made of NMOS transistors directly in the pixels. The other two matrices have only analog front-end electronics and are meant to be coupled to ATLAS FE-I4 chips. All matrices feature pixels with a size of $\mathrm{(50\times250)\;\mu m^2}$ in which the analog electronics are embedded in a Deep N-WELL (DNWELL) also acting as collecting electrode.A Data Acquisition (DAQ) system was developed at IFAE to read out and test the monolithic matrices of the H35DEMO both in the laboratory and with beam test experiments. H35DEMO chips with a resistivity of 200 $\mathrm{\Omega cm}$ have been irradiated with reactor neutrons to a particle fluence of $1\times10^{15}$ $\mathrm{1\;MeV\;n_{eq}/cm^2}$, the expected fluence for the outermost pixel layer of ITk. The monolithic CMOS matrix of the H35DEMO chip was extensively characterised before and after irradiation in beam tests at Fermilab and DESY, with proton and electron beams, respectively.Results after irradiation show good performance in terms of hit efficiency with thresholds of about 1800 e and a bias voltage of 150 V.Another production of monolithic HV-CMOS prototypes in LFoundry 150 nm technology (LF2) has been recently completed. It includes sensors with a similar DNWELL concept as the H35DEMO but with a smaller pixel size of $\mathrm{(50\times50)\;\mu m^2}$. Preliminary measurements of leakage current of the LF2 chips have been preformed showing good agreement with what expected from the foundry process.
id oai-inspirehep.net-1747426
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2019
publisher SISSA
record_format invenio
spelling oai-inspirehep.net-17474262020-03-03T14:37:11Zdoi:10.22323/1.343.0125http://cds.cern.ch/record/2710217engTerzo, StefanoBenoit, MathieuCavallaro, EmanueleCasanova, RaimonFoerster, FabianGrinstein, SebastianIacobucci, GiuseppePeric, IvanPuigdengoles, CarlesVilella, EvaRadiation hard Depleted Monolithic Active Pixel Sensors with high-resistivity substratesDetectors and Experimental TechniquesHigh Voltage/High resistivity Depleted Monolithic Active Pixel Sensors (HV/HR-DMAPS) is a technology which is becoming of great interest for high energy physics applications.With respect to hybrid pixel detectors the monolithic approach offers the main advantages of reduced material budget and production costs due to the absence of the bump bonding process. This aspect is important especially when large areas need to be covered as in the tracking detectors of the LHC experiments. Thus, the possibility of employing this technology in the outermost layers of the upgraded ATLAS pixel detector at the HL-LHC is being investigated.Different HR/HV-DMAPS prototypes have been recently developed for the future ATLAS Inner Tracker (ITk) with the aim of studying their radiation hardness and the feasibility of producing large area devices.The H35DEMO is a large area demonstrator chip for the ITk designed by KIT, IFAE and University of Liverpool and produced in AMS 350 nm HV-CMOS technology with an engineering run on four different substrate resistivities: 20, 80, 200 and 1000 $\mathrm{\Omega cm}$. It consists of four large matrices, two of which include digital electronics and are thus fully monolithic. One, called CMOS matrix, has comparators made of CMOS transistors in the periphery only, while the other, called NMOS matrix, includes also comparators made of NMOS transistors directly in the pixels. The other two matrices have only analog front-end electronics and are meant to be coupled to ATLAS FE-I4 chips. All matrices feature pixels with a size of $\mathrm{(50\times250)\;\mu m^2}$ in which the analog electronics are embedded in a Deep N-WELL (DNWELL) also acting as collecting electrode.A Data Acquisition (DAQ) system was developed at IFAE to read out and test the monolithic matrices of the H35DEMO both in the laboratory and with beam test experiments. H35DEMO chips with a resistivity of 200 $\mathrm{\Omega cm}$ have been irradiated with reactor neutrons to a particle fluence of $1\times10^{15}$ $\mathrm{1\;MeV\;n_{eq}/cm^2}$, the expected fluence for the outermost pixel layer of ITk. The monolithic CMOS matrix of the H35DEMO chip was extensively characterised before and after irradiation in beam tests at Fermilab and DESY, with proton and electron beams, respectively.Results after irradiation show good performance in terms of hit efficiency with thresholds of about 1800 e and a bias voltage of 150 V.Another production of monolithic HV-CMOS prototypes in LFoundry 150 nm technology (LF2) has been recently completed. It includes sensors with a similar DNWELL concept as the H35DEMO but with a smaller pixel size of $\mathrm{(50\times50)\;\mu m^2}$. Preliminary measurements of leakage current of the LF2 chips have been preformed showing good agreement with what expected from the foundry process.SISSAoai:inspirehep.net:17474262019
spellingShingle Detectors and Experimental Techniques
Terzo, Stefano
Benoit, Mathieu
Cavallaro, Emanuele
Casanova, Raimon
Foerster, Fabian
Grinstein, Sebastian
Iacobucci, Giuseppe
Peric, Ivan
Puigdengoles, Carles
Vilella, Eva
Radiation hard Depleted Monolithic Active Pixel Sensors with high-resistivity substrates
title Radiation hard Depleted Monolithic Active Pixel Sensors with high-resistivity substrates
title_full Radiation hard Depleted Monolithic Active Pixel Sensors with high-resistivity substrates
title_fullStr Radiation hard Depleted Monolithic Active Pixel Sensors with high-resistivity substrates
title_full_unstemmed Radiation hard Depleted Monolithic Active Pixel Sensors with high-resistivity substrates
title_short Radiation hard Depleted Monolithic Active Pixel Sensors with high-resistivity substrates
title_sort radiation hard depleted monolithic active pixel sensors with high-resistivity substrates
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.22323/1.343.0125
http://cds.cern.ch/record/2710217
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